Allicdata Part #: | IXTP8N50PM-ND |
Manufacturer Part#: |
IXTP8N50PM |
Price: | $ 1.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 4A TO-220 |
More Detail: | N-Channel 500V 4A (Tc) 41W (Tc) Through Hole TO-22... |
DataSheet: | IXTP8N50PM Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.34039 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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An IXTP8N50PM is an insulated-gate bipolar transistor (IGBT) module, commonly used in a range of applications. As with all IGBTs, it is a type of field-effect transistor (FET) -- consisting of a controlled gate and other components, it works by using an insulated gate to modulate a current flow between the transistor\'s source and drain electrodes. An IXTP8N50PM is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that uses a positive-channel doping design to increase conduction performance and reduce the forward turn-on threshold.
The IXTP8N50PM is most widely used in power control circuits, as it switches medium and high voltage loads in a wide variety of industrial applications. It is also used in solar inverters and direct-current (DC) motors, such as those found in appliances, pumps, and compressors, as well as in a wide array of medical imaging equipment.
The IXTP8N50PM is equipped with a variety of protective features, including an integrated desaturation detection circuit, which prevents short circuits from occurring by activating an external fire safety circuit if an overvoltage or undervoltage occurs. Additionally, the IXTP8N50PM\'s overcurrent protection can detect an abnormal current load, cutting off the current supply to the gate before damaging the module. Both of these features help improve the safety, reliability, and service life of the device.
At the heart of the IXTP8N50PM is its working principle, which lies in its insulated gate component. In a MOSFET, the insulated gate is a layer of highly conductive material that runs between the transistor\'s source and drain electrodes. This layer is called the gate insulation. When a gate voltage is applied to the insulated gate, a current begins to flow through the gate material. This current causes an increase in charge carriers (electrons or holes) near the gate, which modifies the electric field between the source and drain electrodes. This modulation of the electric field is what enables the MOSFET to control the current flowing between its source and drain, allowing it to switch a load without the need for a mechanical switch.
The IXTP8N50PM is a highly efficient and reliable device, with a wide range of applications in the industrial and medical fields. Its insulated-gate design allows it to control current flows efficiently, making it an ideal choice for switching high and medium voltage loads. Additionally, its integrated protection features ensure that the device remains safe and reliable, even under extreme loads.
The specific data is subject to PDF, and the above content is for reference
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