| Allicdata Part #: | IXTT30N60P-ND |
| Manufacturer Part#: |
IXTT30N60P |
| Price: | $ 6.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 30A TO-268 D3 |
| More Detail: | N-Channel 600V 30A (Tc) 540W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT30N60P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 5.40624 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 540W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5050pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 240 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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MOSFETs are one of the building blocks of modern electronics that facilitate switching and control of electrical power. The IXTT30N60P is a type of MOSFET, specifically known as a Depletion Mode n-Channel Power MOSFET. This particular MOSFET is designed for use in power converters, amplifiers, voltage regulators and other power management applications, and comes with several features that make it well-suited for said applications.
The IXTT30N60P has a breakdown voltage of 600V, which makes it ideal for use in high-voltage circuits. In addition, it has extremely low on-state resistance, which is achieved through a high-voltage process designed to reduce losses on account of ohmic heating. It also has a fast switching speed, allowing it to switch quickly between on and off states in order to reduce losses and minimize power consumption.
In addition, the IXTT30N60P has a maximum rating of 30A at 25C, which makes it suitable for use with high currents, such as those required by power management applications. Furthermore, it is capable of handling high frequencies, with a maximum operating frequency of 10 MHz at 25C, allowing it to be used in applications that require high-frequency switching. As such, the IXTT30N60P is a versatile MOSFET with a wide range of applications.
The IXTT30N60P is a voltage-controlled MOSFET, meaning that its on and off states are controlled by applying a voltage to its gate. When a voltage is applied to the gate, the MOSFET is said to be "on". This allows for current to flow through the MOSFET and into the device it is powering. When the voltage is removed from the gate, the MOSFET is said to be "off", effectively disconnecting the power from the device.
The IXTT30N60P is well-suited for applications that require high-voltage, high-current, high-frequency switching. Its features, such as its low on-state resistance and high-frequency capability, make it ideal for use in devices that require high-powered switching. Its impressive range of features make it a good choice for power converters, amplifiers, and voltage regulators - as well as other devices that require high-power switching.
The specific data is subject to PDF, and the above content is for reference
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