IXTT60N10 Discrete Semiconductor Products |
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Allicdata Part #: | IXTT60N10-ND |
Manufacturer Part#: |
IXTT60N10 |
Price: | $ 8.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 60A TO-268 |
More Detail: | N-Channel 100V 60A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXTT60N10 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 7.63980 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT60N10 is a type of N–channel power MOS field-effect transistor (MOSFET) designed to withstand high–voltage and current. It is also integrated with a DMOS construction, making it suitable for several applications.
The IXTT60N10 demystifies the power handling capabilities of power MOSFETs. This device has a drain–source breakdown voltage rating of 600V and maximum gate threshold voltage of 7V. It is also available in large package sizes, with the TO–220AB being the largest of those. Moreover, its low gate charge makes it perfect for low–frequency switching applications.
The IXTT60N10 transistor is suitable for use in power converters, automotive and consumer electronics, industrial applications, robotics, and other high–power switching applications. In addition, its current–driven capabilities make it ideal for controlling power in high–speed switching applications. It can be used in conjunction with short–to medium–length cables and matched with low battery voltages for excellent power efficiency.
As for its working principle, the IXTT60N10 uses an N–channel MOSFET in its construction. This type of transistor consists of an insulated gate, where a small electric charge produces a field that affects the conductivity of a channel between the source and drain. When the gate voltage is applied, it changes the N–channel depletion region size, which in turn affects the electrical current passing through it. This ability makes the IXTT60N10 incredibly useful in controlling current.
The IXTT60N10 also incorporates a junction gate channel (JGC) technology. This technology is used to reduce the gate–source capacitance, resulting in a faster switching performance with high reliability. This feature creates a gain in switching frequency and power efficiency, making it perfect for use in high–frequency switching applications.
The IXTT60N10 is a highly reliable and efficient N–channel power MOSFET device. Its unique combination of features makes it an excellent choice for a wide variety of switching applications, ranging from low–voltage battery operations to high–powered, high–frequency switching requirements. Its integration of JGC technology and superior power handling capabilities make it an ideal choice for designers, system engineers, and other power control professionals.
The specific data is subject to PDF, and the above content is for reference
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