Allicdata Part #: | IXTT30N50P-ND |
Manufacturer Part#: |
IXTT30N50P |
Price: | $ 5.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 30A TO-268 D3 |
More Detail: | N-Channel 500V 30A (Tc) 460W (Tc) Surface Mount TO... |
DataSheet: | IXTT30N50P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 4.73781 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTT30N50P Application Field and Working Principle
Today, when it comes to modern electronic, many types of transistors are used. Field-effect transistors (FETs) are a type of transistor which is based on the control of the electric field which is created by a metal-oxide-semiconductor (MOS) structure. Due to their ability to control current with very little power consumption and wide operating voltage range, FETs have become essential components in modern electronics. One of the most popular types of FETs are single-polarity MOSFETs, such as IXTT30N50P.
IXTT30N50P is an abbreviation for “Integrated Extension Transistor T30N50P”. It is a single die MOSFET that combines the power semiconductor with control, protection and other functions in one package. This device is composed of a vertical power MOSFET, gate protection, a gate pad and a gate driver in a single package.
The IXTT30N50P is highly suitable for many applications, including high precision power converters, dc-dc converters, electronic loads and constant current sources. In addition, this device also has wide range of industrial applications such as motor control systems, lighting, solar energy, security systems and automotive systems.
The working principle of the IXTT30N50P is quite simple. The gate driver triggers the gate protection circuit, which then supplies the gate drive voltage to the gate pad, turning on the vertical MOSFET. The current flows through the MOSFET and out of the drain pin. When the gate driver circuit is deactivated, the gate protection circuit shuts off the gate voltage, and the MOSFET turns off. This process is then repeated with each new gate driver activation.
The IXTT30N50P is a versatile device which is widely used in many different electronic applications. It is capable of providing both protection and power to a circuit while consuming very little power. This makes it perfect for applications where power efficiency is paramount, such as in power converters and dc-dc converters. It also provides an easy way to control and protect circuitry in applications, such as motor control and lighting, without added complexity.
In conclusion, the IXTT30N50P is a single-die field-effect transistor, which combines the power semiconductor with control, protection and other functions in one package. It is an ideal choice for high precision power converters, dc-dc converters, electronic loads and constant current sources, as well as many other industrial applications. Its simple working principle allows it to provide both protection and power to a circuit while consuming a very small amount of power, making it perfect for power-efficient applications.
The specific data is subject to PDF, and the above content is for reference
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