IXTT170N10P

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IXTT170N10P is a N-channel enhancement type power field effect transistor (FET) produced by international semiconductor company IXYS. This model is widely used in various industries and application fields, so understanding its working principle is important for users.

Overview of IXTT170N10P

The IXTT170N10P is an N-type power field effect transistor (FET) with a maximum current handling capacity of 17 A, typical drain-source ON state resistance of 420 mΩ, and breakdown voltage range of 270 V to 600 V. The operating temperature range of this model is from -55 °C to 175 °C. This device also offers reverse drain-to-body diode protection. In addition, IXTT170N10P offers high dv/dt capability, excellent avalanche characteristics, and superior RDS(on).

Application Field of IXTT170N10P

The IXTT170N10P’s excellent features make it an ideal choice for a variety of industrial and commercial applications. The relatively low resistance value of this device makes it especially suitable for high-current switching applications such as motor drives, inverters, and AC/DC power conversion. Additionally, it can be used in various PFC-based applications like SMPS, UPS systems and solar panel power supply control circuits. Moreover, due to its superior RDS(on), Avalanche capability and temperature range it can also be used in high-temperature/high-voltage conditions in automotive, industrial, and off-highway applications.

Working Principle of IXTT170N10P

IXTT170N10P works on the principle of electric field effect. In this principle, electric current is controlled by varying the electric field in a semiconductive material. This device consists of an insulated gate, source and drain which form three connections. The gate’s charge is controlled by an electric field generated from a voltage applied to the gate terminal. When positive gate voltage is applied, electrons are attracted from the drain to the gate, thus providing a conductive path between the source and drain. The resistance between them decreases and allows current to flow. On the other hand, when gate voltage is removed, the electron flow stops and the device turns off. By adjusting the gate voltage the current running between the source and the drain can be controlled.

Advantages of IXTT170N10P

IXTT170N10P offers several advantages over traditional silicon transistors, such as low RDS(on), superior avalanche capability, temperature range and fast switching speed. Compared to Silicon transistors, power FETs have a much faster dynamic response, which makes them suitable for high-frequency switching applications. Moreover, due to their simple construction, they are cost-effective solutions to deliver higher power handling capacity with lower losses. They are also much more efficient than normal transistors, allowing more power to be used for a given power dissipation.

Conclusion

IXTT170N10P is a N-channel enhancement type power FET with excellent features that make it suitable for a variety of applications. Its low RDS(on), fast switching speed, superior avalanche capability, and temperature range make it an ideal choice for various PFC-based applications such as SMPS, UPS systems and solar panel power supplies. With these advantages, IXTT170N10P is a reliable and cost-effective solution for high-current switching applications.

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