IXTT75N20L2 Discrete Semiconductor Products |
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Allicdata Part #: | IXTT75N20L2-ND |
Manufacturer Part#: |
IXTT75N20L2 |
Price: | $ 8.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 75A D2PAK |
More Detail: | MOSFET N-CH 200V 75A D2PAK |
DataSheet: | IXTT75N20L2 Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 7.43883 |
Series: | -- |
Packaging: | -- |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The IXTT75N20L2 is a high voltage MOSFET that exhibits excellent power efficiency and response times. It is an insulated-gate field-effect transistor (IGFET) that utilizes a P-channel type threshold voltage. It can be used in a variety of application such as AC-DC converters, motor and air conditioner controls, automotive electronics, and high-power battery charging.
The IXTT75N20L2 offers low RDS(on) resistance, meaning low power loss even at high frequencies. It has a maximum continuous drain current of 75 amps, and a maximum drain source voltage up to 80 volts. It has excellent behavior in transient, fluid power application and in user environments. With the amount of power the device can easily handle the IXTT75N20L2 is the perfect choice for high current applications.
This MOSFET also feature low turn-on and high turn-off switching speed. These switching speeds have been tailored for extreme current drive capabilities and high thermal stability. The IXTT75N20L2 also demonstrates strong capacitance performance and exceptional resistance to Board Level Transient Emissions (BLEs).
The design of the IXTT75N20L2 is quite reliable and thermally efficient. It has an extremely low thermal resistance of minimal 1.25 K/W. This ensures that the operating temperature inside the device remains as low as possible to ensure longer life. The device also features a high load capacity rating which makes it suitable for high power applications.
The IXTT75N20L2 has an internal Schottky diode clamped to a Drain-to-Source voltage that ensures an improved level of EMI immunity. This provides the device with the highest level of reliable EMI protection for system operation.
This MOSFET utilizes a vertical double-diffused metal oxide semiconductor (MOS) process with floating channel cell technology. This allows the device to possess a wide array of advantages such as fast switching speed, low on- resisted, low gate charge, and self-protected dv/dls. The device offers excellent noise immunity capabilities over a wide range of frequencies, as well as reduced shoot-through and cross-conduction.
In conclusion, the IXTT75N20L2 is a powerful, efficient, and reliable MOSFET that can be used in a variety of application areas. It is the perfect solution for high current and fast switching applications in the areas of AC-DC converters, motor and air conditioner controls, automotive electronics, and high-power battery charging. The device offers a wide array of features such as low on-resistance and excellent noise immunity.
The specific data is subject to PDF, and the above content is for reference
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