| Allicdata Part #: | IXTT26N60P-ND |
| Manufacturer Part#: |
IXTT26N60P |
| Price: | $ 5.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 26A TO-268 D3 |
| More Detail: | N-Channel 600V 26A (Tc) 460W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT26N60P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 4.73781 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 460W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 270 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT26N60P is a high-efficiency device, integrating a high-speed power MOSFET and an internal gate driver. It is a low on-resistance seven-lead DPAK module. The IXTT26N60P offers very high current capabilities and extremely low temperatures for extended operation. It is suitable for applications in the power supply, motor drive, and lighting, including lighting LEDs.
The IXTT26N60P is designed to take advantage of the benefits of high and low power MOSFET technology. The IXTT26N60P uses a low-power MOSFET to drive the high power MOSFET. By limiting the power usage of the high-power MOSFET, the device is able to achieve higher efficiency and lower power densities. The use of two power MOSFETs in this single package also eliminates the need for two separate gates, reducing system complexity, rail count, and power dissipation.
The IXTT26N60P features a maximum average on-resistance of 0.25 ohms and a maximum power loss of 5 watts. It also features a fast switching time, allowing it to operate at high-frequencies. The IXTT26N60P has a working temperature range of -40 to +85°C.
The IXTT26N60P is designed for applications in the power supply, motor drive, and lighting, including LED lighting. It is designed for use in applications requiring high current and flexibility. It is also used in medical applications, due to its low on-resistance, wide operating temperature range, and fast switching times. The IXTT26N60P is also used in automotive and industrial applications, for instance in gate drive circuits for motor drives.
The working principle of the IXTT26N60P is based on the use of a high efficiency, low on-resistance, high-current MOSFET. A low power MOSFET is used to drive the high power MOSFET, which allows operation at high frequencies and low power dissipation. The output is switched between high and low logic levels, making it suitable for high-efficiency smart power control.
The IXTT26N60P has a wide operating temperature range of -40 to +85°C and is suitable for a variety of applications in the power supply, motor drive, and lighting, including LED lighting. Its low on-resistance and high current capabilities make it an ideal choice for applications requiring high current and high efficiency. Its fast switching time also makes it suitable for use in gate drive circuits, such as motor drives.
The specific data is subject to PDF, and the above content is for reference
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