Allicdata Part #: | IXTT360N055T2-ND |
Manufacturer Part#: |
IXTT360N055T2 |
Price: | $ 6.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 360A TO268 |
More Detail: | N-Channel 55V 360A (Tc) 935W (Tc) Surface Mount TO... |
DataSheet: | IXTT360N055T2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 5.49528 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 935W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 20000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 360A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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The IXTT360N055T2 is an insulated gate bipolar transistor (IGBT) used in a variety of electronics applications, including AC/DC and DC/DC converters, DC/AC inverters, and power supplies. It is a perfect choice when steady and reliable power needs to be applied. The transistor has a N-channel enhancement-mode operation, making it energy efficient and cost effective.The IXTT360N055T2 comes in three different packages: TO-251, TO-252, and TO-3P. The device offers superior performance with low gate drive losses and low total gate charge, making it ideal for high-frequency switching applications. It has a low on-state resistance for increased conduction losses and a low switching resistance for improved efficiency. The IXTT360N055T2 also features low thermal impedance, excellent avalanche energy capability, and a highly integrated driver gate.The working principle of IXTT360N055T2 involves two electric fields: one between the gate and the substrate and another between the drain and the substrate. When a positive voltage is applied to the gate, charges in the depletion region of the substrate depletion region increase, which raises the voltage between the gate and the substrate. This causes the junction between the drain and the substrate to become more effectively reversed biased. As a result, holes in the junction region become more strongly repelled, thus allowing current to flow between the drain and the substrate. This is known as the selective effect of the IGBT.The IXTT360N055T2 is a high-power transistor device, which can be used in applications such as power conditioning, solar modules, motor drives, and lighting. It is suitable for hard switching and long duration operating. The device can be used at temperature s as low as -40°C and up to 150°C , and its low forward voltage drop and high blocking voltage ensure high energy efficiency and long life.The IXTT360N055T2 is ideal for a variety of different applications, for its robustness, reliability, and cost-effectiveness. The device offers excellent switching performance and provides superior performance when compared to other power devices. It is a perfect choice when a steady and reliable power needs to be applied.The specific data is subject to PDF, and the above content is for reference
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