IXTT360N055T2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	935W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	20000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	330nC @ 10V
Series:	TrenchT2™
Rds On (Max) @ Id, Vgs:	2.4 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	360A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXTT360N055T2 is an insulated gate bipolar transistor (IGBT) used in a variety of electronics applications, including AC/DC and DC/DC converters, DC/AC inverters, and power supplies. It is a perfect choice when steady and reliable power needs to be applied. The transistor has a N-channel enhancement-mode operation, making it energy efficient and cost effective.The IXTT360N055T2 comes in three different packages: TO-251, TO-252, and TO-3P. The device offers superior performance with low gate drive losses and low total gate charge, making it ideal for high-frequency switching applications. It has a low on-state resistance for increased conduction losses and a low switching resistance for improved efficiency. The IXTT360N055T2 also features low thermal impedance, excellent avalanche energy capability, and a highly integrated driver gate.The working principle of IXTT360N055T2 involves two electric fields: one between the gate and the substrate and another between the drain and the substrate. When a positive voltage is applied to the gate, charges in the depletion region of the substrate depletion region increase, which raises the voltage between the gate and the substrate. This causes the junction between the drain and the substrate to become more effectively reversed biased. As a result, holes in the junction region become more strongly repelled, thus allowing current to flow between the drain and the substrate. This is known as the selective effect of the IGBT.The IXTT360N055T2 is a high-power transistor device, which can be used in applications such as power conditioning, solar modules, motor drives, and lighting. It is suitable for hard switching and long duration operating. The device can be used at temperature s as low as -40°C and up to 150°C , and its low forward voltage drop and high blocking voltage ensure high energy efficiency and long life.The IXTT360N055T2 is ideal for a variety of different applications, for its robustness, reliability, and cost-effectiveness. The device offers excellent switching performance and provides superior performance when compared to other power devices. It is a perfect choice when a steady and reliable power needs to be applied.

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