IXTT120N15P Allicdata Electronics
Allicdata Part #:

IXTT120N15P-ND

Manufacturer Part#:

IXTT120N15P

Price: $ 4.89
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 120A TO-268
More Detail: N-Channel 150V 120A (Tc) 600W (Tc) Surface Mount T...
DataSheet: IXTT120N15P datasheetIXTT120N15P Datasheet/PDF
Quantity: 1000
30 +: $ 4.39635
Stock 1000Can Ship Immediately
$ 4.89
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 600W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTT120N15P is a type of insulated gate bipolar transistor (IGBT) - also commonly referred to as a MOSFET. This type of MOSFET is used in applications where the effective resistance of the device is important. The IXTT120N15P is typically used in motor control systems, power supplies and switching applications.

As a MOSFET, the IXTT120N15P relies on the application of an electric field to polarize the insulated-gate region of the device. When a voltage is applied to the gate, a layer of electrons is attracted to the gate forming a barrier that separates the source and drain regions. This barrier limits the flow of electrons across the device, effectively controlling the rate of current flow. The voltages which can be applied to the gate depend on the characteristics of the device, but for the IXTT120N15P this range from 4 to 8V max.

At its most basic level, the IXTT120N15P can be seen as a switch, with either a high or low signal applied to the gate electrode. When a high signal is applied, current flows from the source to the drain region. When a low signal is applied, no current flows. To allow for more precise control over the current flow, the IXTT120N15P can also be used with PWM pulses. By varying the pulse width, the amount of current flowing through the device can be precisely controlled.

The IXTT120N15P has a wide variety of applications. The most common application is in motor control systems, where the power supply and current flow can be precisely regulated. It can also be used in power supplies, as an efficient means of regulating the voltage and current output. For switching applications, the IXTT120N15P can also be used to provide a fast, reliable switch with low power consumption.

In summary, the IXTT120N15P is a type of MOSFET which is used in a wide variety of applications. It relies on the application of an electric field to polarize the gate region and control the current flow between the source and drain regions. By varying the voltage which is applied to the gate electrode, the amount of current flowing through the device can be precisely regulated. As such, the IXTT120N15P is an ideal solution for applications where precise control over the current flow is required.

The specific data is subject to PDF, and the above content is for reference

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