IXTT88N30P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTT88N30P is an advanced-level N-channel PowerTrench MOSFET that is optimized for mobile design. The IXTT88N30P offers excellent RDS(on) performance, extremely low Ron, fast switching performance, and ENPAK packaging options. The IXTT88N30P is suitable for use in mobile and consumer applications, and provides the perfect combination of power and performance in a single package.

A PowerTrench MOSFET is a type of Field-effect transistor (FET) that is specifically designed to provide power efficiency and high density on-chip integration for portable and consumer products such as mobile phones, digital cameras, and audio systems. The “PowerTrench” refers to the physical configuration of these devices that is typically optimized for low gate-source capacitance and low on-resistance (Ron) while providing improved current handling capability compared to other types of transistors.

The IXTT88N30P is specifically designed to provide power efficiency and overall superior performance in a single package. The device utilizes the advanced “PowerTrench” process to minimize gate-source capacitance while providing low Ron and improved current handling capability. The device also features a “drop-in-place” configuration which allows for fast and easy implementation into new designs.

At its core, the IXTT88N30P is an N-channel MOSFET which operates using the same basic principles as other MOSFETs. A MOSFET is a voltage-controlled transistor that uses electric fields to control the current flow. It consists of two input sources and two output terminals for current flow. When the gate terminal is positive with respect to the source terminal, it causes electrons to pass through the channel from the source to the drain. Conversely, when the gate is negative with respect to the source, nearly no current flows through the device. This is the basic operating principle of the IXTT88N30P.

The IXTT88N30P is mainly used as a power switch in systems with electrically-driven loads. When the gate is driven high, current will flow from the source to the drain, allowing power to be delivered to the load. Conversely, when the gate is driven low, current will be inhibited, thereby preventing power from being delivered to the load. This versatile switch behavior of the IXTT88N30P makes it suitable for use in a variety of applications such as business equipment, consumer electronics, and mobile phones.

The IXTT88N30P is superior in terms of performance when compared to other MOSFETs due to its low Ron, fast switching speeds, and advanced package design. Its low Ron allows for superior power efficiency and performance, while its fast switching speeds allow for faster response times. The device also features a “drop-in-place” package design which simplifies assembly and improves the overall performance of the device.

Overall, the IXTT88N30P is a high-performance power switch suitable for use in portable and consumer devices. It utilizes the advanced “PowerTrench” process to minimize gate-source capacitance while providing improved power efficiency and low Ron. The device also features a “drop-in-place” configuration which allows for fast and easy implementation, making it an ideal choice for those looking for a powerful and reliable power switch solution.

The specific data is subject to PDF, and the above content is for reference