Allicdata Part #: | IXTT36N50P-ND |
Manufacturer Part#: |
IXTT36N50P |
Price: | $ 6.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 36A TO-268 D3 |
More Detail: | N-Channel 500V 36A (Tc) 540W (Tc) Surface Mount TO... |
DataSheet: | IXTT36N50P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 5.40624 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTT36N50P is a single complementary metal oxide semiconductor (CMOS) field-effect transistor (feft) that provides low-cost, high-performance switching and level-shifting applications. It has a standard gate that controls the drain-source current and an intrinsic body diode. It is suitable for use in a variety of applications, including inverters, flip-flops, and other logic functions.
The IXTT36N50P is a high voltage type of device which can operate up to 50V in continuous drain-source mode and offers optimized design flexibility. It is an ideal choice for applications that need high-side switching in battery operated portable equipment or automotive electronics. The device has low dynamic and static on-state resistance and high peak current capability, which makes it excellent for switching power levels in high-frequency DC-DC converters, motor control, and power supply applications.
The operation of the IXTT36N50P, like other FETs, is based on the transfer of charge from the source to the drain. The voltage between the gate and source determines the current flow from the source to the drain. This phenomenon is known as the “gate to source voltage transfer gain”, which is the principle at work in the IXTT36N50P. A positive voltage applied to the gate relative to the source causes current to flow from the source terminal to the drain terminal, while a negative voltage applied to the gate relative to the source causes current to flow from the drain terminal to the source terminal.
The IXTT36N50P has a number of advantages over other types of transistors, such as bipolar transistors or metal oxide semiconductor field effect transistor (MOSFET). For example, it has low on-state resistance which allows for high switching speeds, fast turn-on, and no body diode recover time. It also offers low gate charge, which simplifies the layout of circuits and reduces power loss due to gate charging. Additionally, it has low threshold voltage and can handle higher gate source voltages. Furthermore, it has very low input capacitance and high output capacitance, which provides an excellent frequency response.
The IXTT36N50P is suitable for use in high-efficiency switched-mode power supply (SMPS) designs and other high-power switching applications. It is ideally used in applications that require fast switching and precise control of the output current. It is also suitable for applications that require precise voltage control, such as in DC-DC converters. Its low on-state resistance, low input capacitance, and high output capacitance also make it an excellent choice for high-frequency switching applications.
In conclusion, the IXTT36N50P is an excellent choice for a range of power switching applications. Its combination of low on-state resistance, low gate charge, low input capacitance, and high output capacitance delivers fast switching and precise voltage control. It is an ideal choice for high-efficiency SMPS designs, DC-DC converters, and other high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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