IXTT34N65X2HV

Introduction

The IXTT34N65X2HV is a power field-effect transistors (PowerMOSFET). The N-channel MOSFETs are designed to minimize on-state resistance while providing superior switching performance. The device is designed to provide reliable and efficient performance in high speed switching applications such as DC-DC converters, LED drivers, motor controllers, and power supplies.

Applications

IXTT34N65X2HV provide excellent thermal stability and superior on-state resistance for the usage in power management and conversion application. They ideally suited for automotive and consumer applications, such as DC-DC converters, inverters, and motor controllers. It also provides superior switching performance for DC-DC converters.

Features and benefits

• Current rating up to 650V.
• Outstanding hot-switching performance and safe-operation area.
• Exceptional high-temperature performance.
• High conduction and switching speed.
• Low gate charge.

Working principle

The operation of the IXTT34N65X2HV is based on the principle of an insulated gate field-effect transistor. An electrical field is created by applying a voltage between the gate and drain of the device, which changes the conduction of the “on” state MOSFET. By controlling the gate voltage and the corresponding drain-source voltage, the conduction of the device can be regulated. Thus, the IXTT34N65X2HV can be used to switch high power currents efficiently and reliably.

Conclusion

The IXTT34N65X2HV is a power MOSFET designed for high speed switching applications. The device features an outstanding hot-switching performance and an excellent thermal stability as well as low gate charge, making it ideal for automotive, consumer, and industrial applications.