IXTT34N65X2HV Allicdata Electronics
Allicdata Part #:

IXTT34N65X2HV-ND

Manufacturer Part#:

IXTT34N65X2HV

Price: $ 4.39
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH
More Detail: N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO...
DataSheet: IXTT34N65X2HV datasheetIXTT34N65X2HV Datasheet/PDF
Quantity: 1000
30 +: $ 3.95073
Stock 1000Can Ship Immediately
$ 4.39
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268HV
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 96 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

The IXTT34N65X2HV is a power field-effect transistors (PowerMOSFET). The N-channel MOSFETs are designed to minimize on-state resistance while providing superior switching performance. The device is designed to provide reliable and efficient performance in high speed switching applications such as DC-DC converters, LED drivers, motor controllers, and power supplies.

Applications

IXTT34N65X2HV provide excellent thermal stability and superior on-state resistance for the usage in power management and conversion application. They ideally suited for automotive and consumer applications, such as DC-DC converters, inverters, and motor controllers. It also provides superior switching performance for DC-DC converters.

Features and benefits

  • Current rating up to 650V.
  • Outstanding hot-switching performance and safe-operation area.
  • Exceptional high-temperature performance.
  • High conduction and switching speed.
  • Low gate charge.

Working principle

The operation of the IXTT34N65X2HV is based on the principle of an insulated gate field-effect transistor. An electrical field is created by applying a voltage between the gate and drain of the device, which changes the conduction of the “on” state MOSFET. By controlling the gate voltage and the corresponding drain-source voltage, the conduction of the device can be regulated. Thus, the IXTT34N65X2HV can be used to switch high power currents efficiently and reliably.

Conclusion

The IXTT34N65X2HV is a power MOSFET designed for high speed switching applications. The device features an outstanding hot-switching performance and an excellent thermal stability as well as low gate charge, making it ideal for automotive, consumer, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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