Allicdata Part #: | IXTT100N25P-ND |
Manufacturer Part#: |
IXTT100N25P |
Price: | $ 6.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 100A TO-268 |
More Detail: | N-Channel 250V 100A (Tc) 600W (Tc) Surface Mount T... |
DataSheet: | IXTT100N25P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 6.13389 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Transistors are fundamental building blocks in any digital system. They can be used to amplify a signal or to control a current. Field Effect Transistors, or FETs, are one type of transistor that can be used for these purposes. Among the FETs, the IXTT100N25P is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is widely used in many electronics applications.
The IXTT100N25P is a P-Channel Enhancement Mode MOSFET. It has a maximum drain current of 50 Amps and a maximum drain-source breakdown voltage of 250 Volts. It has an RDS (ON) (On-state Drain-source Resistance) of 18 mOhms at 10V VGS (Gate-Source Voltage), and a gate threshold voltage of 1.9 Volts. It is widely available in multiple packages, including the TO-220, TO-252, and the TO-263.
The IXTT100N25P can be used in a wide range of electronic applications. It can be used to switch high current loads, as it has low on-state resistance and high continuous drain current. It is widely used as a power switch in power supplies, as it can control higher voltages. It is also widely used in switching applications, such as DC/DC converters, motor controllers, and voltage regulators. The IXTT100N25P is also used for load switching in applications like PLCs, vending machines, and home appliances.
The working principle of an IXTT100N25P is relatively simple. It is a type of insulated-gate field-effect transistor (IGFET) which works on the principle of voltage control. The transistor is switched by applying a bias voltage to the gate terminal, which then modulates the conductivity of the device. When the gate is biased at a higher potential, it pulls the channel region close to the gate terminal, thus, increasing the conductivity of the device. This leads to an increase in the current flowing through the device. Similarly, when the gate is biased at a lower potential, the channel region moves away, thus, reducing the conductivity of the device, resulting in a decrease in the current.
The IXTT100N25P is a unique and versatile device, being used in many different types of applications. Its operating principle is simple, and it can be used to switch high current loads, as well as being used in various DC/DC converters, motor controllers, and power supplies. The IXTT100N25P is a highly reliable and robust component, making it perfect for a variety of different applications and scenarios.
The specific data is subject to PDF, and the above content is for reference
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