Allicdata Part #: | IXTT8P50-ND |
Manufacturer Part#: |
IXTT8P50 |
Price: | $ 4.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 500V 8A TO-268 |
More Detail: | P-Channel 500V 8A (Tc) 180W (Tc) Surface Mount TO-... |
DataSheet: | IXTT8P50 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 4.32201 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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An IXTT8P50 is a type of MOSFET (Metal Oxide Silicon Field Effect Transistor), a type of transistor that controls and regulates the flow of power in circuits. It is a single-target MOSFET that offers protection against a variety of transients. There are many different types of MOSFETs available, but the IXTT8P50 is one of the most reliable and comprehensive.
The IXTT8P50 is a 60V device with a drain-source breakdown voltage of 55V and a fast switching speed of up to 20V/ns. It can be used in many different applications, ranging from low-noise circuitry to high-current load switching.
The IXTT8P50 is an excellent tool for controlling power in critical environments. It is designed to be robust and resilient, so it is frequently used in harsh conditions. Its flexibility, reliability, and ease of installation make it a favorite among engineers.
The IXTT8P50 works by controlling the flow of power between the collector and the drain. When a voltage is applied to the gate, it creates a channel between the collector and the drain. This channel allows power to freely flow, or be blocked, depending on the voltage that is applied to the gate. In this way, the IXTT8P50 can control the flow of power.
The IXTT8P50 also offers protection against transients. Transients are electrical events that are very short, unpredictable bursts of power that can damage circuits or cause malfunctions. The IXTT8P50 is designed to sense and respond to these transients, providing protection against them.
The IXTT8P50 is a reliable and effective MOSFET that is used in many different situations. Its flexibility, reliability, protective features, and ease of installation make it a popular choice in many critical environments. It is an excellent tool for controlling power and protecting circuits from transients.
The specific data is subject to PDF, and the above content is for reference
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