MUN5132DW1T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363

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The MUN5132DW1T1G is a type of pre-biased transistor array. It falls under the type of bipolar junction transistors (BJTs), which are three-terminal semiconductor devices commonly used for many different applications. This particular type of transistor array is designed for the purpose of providing an integrated circuit with a much lower power dissipation, while also offering protection from transients and reverse diodes failure.The MUN5132DW1T1G pre-biased transistor array is a double NPN/PNP array made up of 15 transistors in a single package. This transistor array has a very broad range of application fields, such as switching and amplifier circuits, general amplification, voltage regulators, and line receivers. The wide input voltage range and low cost of the array make it suitable to use in many different applications.The MUN5132DW1T1G is of extremely small size and offers a high degree of packaging flexibility. It has an operating temperature range from -40 to +85 degrees Celsius, so it can be used in a variety of environment conditions. The transistor array offers industry-standard EIA/JEDEC (JIS B3221) TSOP-II package. The array offers a very high input leakage current (100mA) and a wide range of low voltage gain (from 18.5 to 20.5). Its 0.8V voltage drop on the current path ensures a very low power dissipation, thus allowing for a very efficient operation. The array also offers a very low base-emitter voltage of 0.6V, which makes it suitable to use in applications that require an extremely fast and clean switch-off operation.The MUN5132DW1T1G transistor array works by creating an amplifier circuit that takes in an input signal and amplifies it. It consists of two transistors (NPN and PNP) that work in tandem, so that the output signal is larger than the input signal. The NPN transistor acts as an amplifier and provides an output signal that is stronger than the input signal. The PNP transistor, on the other hand, is used to provide protection from transients and reverse current flow. The two transistors, working in tandem, are able to provide an overall amplification of the signal, resulting in a much greater output than the input.The MUN5132DW1T1G pre-biased transistor array is a reliable, efficient, and economical option for many types of applications. Its size and flexibility make it ideal for use in many different circuits, and its wide voltage range ensures a reliable operation in a variety of environmental conditions. Its low voltage drop and high level of protection against transients and reverse diodes make it a reliable choice for many types of applications.

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