Allicdata Part #: | MUN5133DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5133DW1T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | MUN5133DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02982 |
6000 +: | $ 0.02593 |
15000 +: | $ 0.02204 |
30000 +: | $ 0.02075 |
75000 +: | $ 0.01945 |
150000 +: | $ 0.01729 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | MUN51**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The MUN5133DW1T1G bipolar transistor array is a powerful and reliable device designed for applications in many different fields. It consists of a number of different transistors that work together to deliver high power with excellent performance. In addition to its power advantages, this transistor array also offers a convenient and efficient way to build pre-biased structures.
The MUN5133DW1T1G is designed to provide amplification and enable switching with low voltage level. It is often used in low-profile applications for input and output current matching. It has a high gain and excellent on-off ratio. The MUN5133DW1T1G transistor array features a very low leakage current, making it suitable for use in mobile and portable devices.
This pre-biased transistor array uses the current flow-through concept to match the transistor\'s output current to the input voltage. The flow control concept ensures that the output current matches the input voltage over a wide range. This concept also enables the device to work in a wide range of temperature environments. This concept makes it ideal for use in applications where fast response times are required.
The working principle of the MUN5133DW1T1G transistor array is based on BJT. The transistors are arranged in a cascode configuration with a BiCMOS process. This configuration allows the transistors to be connected in parallel and simultaneously, thus providing high reliability and increased switching speed. In this configuration, the current is drawn from the source to the drain whenever it is needed. This flow control configuration helps to reduce the input and output capacitance, making the device more reliable and faster.
The MUN5133DW1T1G transistor array is used in a variety of applications, such as in switching power supplies, DC control circuits, voltage regulators, and motor control circuits. In addition to these applications, it can also be used in low frequency switching circuits, such as oscillators and processors.
The MUN5133DW1T1G bipolar transistor array is a versatile and reliable device designed to provide reliable performance in many different applications. It has a high gain and excellent accuracy, making it suitable for use in low-profile designs. The BiCMOS process and current flow-through concept enable the device to work efficiently even in the harshest temperature environments. This makes it an ideal choice for applications requiring fast response times. The device’s versatility and reliability makes it a great option for any kind of application.
The specific data is subject to PDF, and the above content is for reference
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