MUN5137DW1T1G

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MUN5137DW1T1G application field and working principle

The MUN5137DW1T1G is an array of pre-biased NPN Darlington transistors ideal for linear and switching applications. Specifically, their wide operating temperature range and superior ESD ratings make them a great choice for electronic devices where reliability and robustness under harsh conditions is essential, such as automotive, industrial, and medical applications.

The MUN5137DW1T1G has two identical NPN Darlington transistor arrays, each with an integrated base resistor and a common emitter output. The high-gain transistors feature a current gain of 2000 and saturation levels down to 0.3 V. The pre-biased feature allows them to be used with a wide range of supply voltages for linear applications like current regulation and high-side switching, or for low-side switching in CMOS applications. Additionally, the integrated common-emitter output provides potential advantages such as a lower input impedance, faster switching speeds, and a lower operating voltage.

The MUN5137DW1T1G operates on a supply voltage range of 2.7–17V, making it suitable for both low and high-voltage applications. It has an operating temperature range of -40°C to 125°C, which makes it highly reliable even in extreme temperatures. Additionally, its ESD protection level is rated at 4500 V. This ensures that the device can handle lightning strikes and other harsh electrical environments without damage to the transistor.

The MUN5137DW1T1G is a versatile and reliable device that is perfect for a wide range of linear and switching applications. Its pre-biased feature makes it suitable for high and low voltage applications, and its wide operating temperature range and ESD protection level make it a great choice for industrial, automotive, and medical applications.

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