Allicdata Part #: | MUN5235DW1T1-ND |
Manufacturer Part#: |
MUN5235DW1T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | MUN5235DW1T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | MUN52**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The MUN5235DW1T1 is a pre-biased transistor array that is a perfect example of the technical advances possible within the Arrays, Pre-Biased, Bipolar (BJT) Transistor family. Understanding the application field and working principle of this particular transistor array can greatly enhance any engineer’s confidence in the reliability of electronics. This paper will describe the application field and working principle of the MUN5235DW1T1, providing readers with the knowledge to properly utilize the device and ensure a successful application.
Application Field
The MUN5235DW1T1 was designed for a variety of standard diode and transistor applications. It is particularly suitable for providing bias for input/output buffers, driver stages, amplifiers, power supplies, and several other circuits. It is capable of being combined with complementary and non-complementary N-channel and P-channel FETs, with four separate outputs for each type. Furthermore, the MUN5235DW1T1 enables engineers to easily design extremely accurate, reliable and flexible monolithic circuit solutions. Benefits of using this device include improved device uniformity, superior noise performance, lower power consumption, and greater speed.
Working Principle
The MUN5235DW1T1 is based on a pair of transistors connected in a pre-biased configuration. The two transistors are connected in series, with the emitter of the first transistor connected to the base of the second. This configuration results in the transistor being pre-biased, meaning that it is always "on" and ready to be used. Each transistor has four separate outputs, which can be used to create a variety of circuits, such as unity gain PCM audio amplifiers, logic inputs for microcontrollers, and small signal buffers.The MUN5235DW1T1 is a reliable and effective device, with many advantages over traditional transistor arrays. It is much easier to work with, as it is pre-biased and requires no external circuitry to make it work. Additionally, the device is capable of computing much faster than other transistor arrays, and is also much more energy efficient. Furthermore, the MUN5235DW1T1 transistor array is much more reliable than other arrays, as it can produce more accurate signals and does not require frequent recalibration.
Conclusion
The MUN5235DW1T1 is an excellent transistor array from the Arrays, Pre-Biased, Bipolar (BJT) Transistor family. It is extremely well suited for a variety of standard diode and transistor applications and can be used to create circuits such as unity gain PCM audio amplifiers, logic inputs for microcontrollers, and small signal buffers. Additionally, it is much easier to work with than other transistor arrays, and is also much more energy efficient and reliable. For engineers looking for a pre-biased device to provide bias for input/output buffers, driver stages, amplifiers, power supplies, and several other circuits, the MUN5235DW1T1 is a great choice.
The specific data is subject to PDF, and the above content is for reference
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