Allicdata Part #: | NVMFD5483NLT1G-ND |
Manufacturer Part#: |
NVMFD5483NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 6.4A 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 6.4A 3.1W Surf... |
DataSheet: | NVMFD5483NLT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 6.4A |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 668pF @ 25V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NVMFD5483NLT1G transistors have become very popular for their application in numerous fields and for their attractive working principle. These transistors are Field Effect Transistors (FETs) which belong to the category of MOSFETs or Metal Oxide Semiconductor Field Effect Transistors. They are grouped under the category of arrays and their functionality is based on the principle of electric charge flow. They are widely used in the field of semiconductor device engineering and are very efficient in amplifying signals and providing better and higher precision control. They also provide low power consumption and stable internal dynamics.
NVMFD5483NLT1G has many features which make it a suitable device for many applications. The features of these transistors include low voltage drive capability, high speed switching, wide bandwidth, high current capability, low-power operation and wide range of temperature. These features make them suitable for a range of applications such as amplifiers, oscillators, power regulators, radios, switching circuits and digital systems. These devices are also finding their application in many industrial and consumer applications.
The working principle of NVMFD5483NLT1G transistors involves the passage of electricity through a semiconductor material. When the current passes through this material, an electric field is created and a junction is formed between the two materials. This junction acts as a conductor and carries the current across it. This junction also controls the flow of current through the material and controls the electrical parameters of the transistor. This feature allows NVMFD5483NLT1Gs to be used as amplifiers and to provide high precision control.
The design of these transistors also makes them very durable and reliable. The low power consumption and low voltage drive are also very advantageous for these transistors. The high speed switching and high-current transport provide the user with excellent performance and stability, and therefore these transistors are ideal for use in commercial, industrial and consumer applications. The low thermal resistance, wide bandwidth and wide temperature range also make them very attractive for use in such applications.
NVMFD5483NLT1G transistors are available in different configurations and packages, thus allowing the user to select the best fit for the application. The high reliability and extended life are also beneficial features of this particular transistor type. In conclusion, NVMFD5483NLT1G transistors are powerful devices that offer many advantages in terms of performance and reliability. Their ability to provide reliable and high precision control make them ideal for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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