NVMFS5C450NT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVMFS5C450NT1G is a single R-FET with an enhanced 4th generation of trench insulated gate field effect transistor (FET) technology. This transistor is a combination of advanced silicon technology and a robust design that make it best-in-class device for high-performance applications. It is mainly used in power conversion and inverters.

The NVMFS5C450NT1G power FET can serve as a switch or an amplifier in switching applications. Its off state Rds (on) is low, making it great for usage in high-frequency or low-loss circuits. This makes the transistor suitable for use in various high-voltage switching applications.

The maximum drain current for the NVMFS5C450NT1G device is 460A. Thus, it is suitable for usage in applications requiring low-frequency power conversion as it can handle large amounts of current. The device is also rated for 200V, making it suitable for applications with high-voltage requirements.

The most important attribute of the NVMFS5C450NT1G power FET is its low on-resistance (Rds (on)). The on-resistance of this transistor is about 48mOhms, which makes it suitable for use in applications that require low-frequency switching or low-loss circuits. Additionally, the on-resistance is independent of the drain-to-source voltage, making it ideal for use in low voltage applications.

The NVMFS5C450NT1G operates by having a gate and source terminal connected to the substrate. The substrate then provides an electric field, allowing the gate to control the current flowing between the source and the drain. There are three important operating regions: linear, saturation and cut-off. The linear region is when the current across the gate is low and the device is functioning as an amplifier. In the cut-off region, the gate is open and no current can flow from the source to the drain. In the saturation region, the device is in its on state, and the current can flow from the source to the drain.

The NVMFS5C450NT1G power FET can be used for applications like high-frequency switches, motor drivers, inverters, DC-DC converters, etc. It is also suitable for use in industrial automation applications due to its robust and reliable performance. The device has a maximum thermal resistance rating of 0.43K/W, which means that it can handle dissipating high amounts of power without excessive heating. Additionally, this transistor has an integrated ESD Protection Diode, making it suitable for use in portable and wearable electronics.

The NVMFS5C450NT1G is an improved version of the standard FET technology. It has an improved 4th generation of trench insulated gate field effect transistor technology and a robust design. It makes use of advanced silicon technology allowing low-loss switching and low-frequency operations. The device has a low on-resistance of 48mOhms, making it ideal for use in low voltage applications. It is also suitable for use in high-voltage applications given its maximum drain current of 460A. Furthermore, it has low thermal resistance, making it ideal for dissipating large amounts of power. Additionally, it has an integrated ESD Protection Diode that makes it suitable in portable and wearable electronics. This makes the NVMFS5C450NT1G an ideal choice for applications requiring power conversion, inverters, motor drivers, high-frequency switches, industrial automation, and more.

The specific data is subject to PDF, and the above content is for reference