NVMFS4841NWFT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVMFS4841NWFT1G is a silicon carbide metal–oxide–semiconductor field-effect transistor (MOSFET) designed for applications where minimal thermal resistance is desired. It is part of a series of power MOSFETs developed by STMicroelectronics to enable higher electric power performance in the application field of virtually any end product employing power switches.

This device is a member of the super-junction MOSFETs family which is composed of a double diffusion process coupled with an optimized buffer layer between the drain/source and channel area. The device is manufactured using Super-Feldspar (SF) process technology and has a maximum output voltage of 25V and a maximum input voltage of 100V. It also has a peak current capability of 48A and a typical on-resistance of 3.2mΩ.

The working principle of the NVMFS4841NWFT1G is based on potential variations of the drain/source induced by the variations of the gate voltage. The gate terminal of the MOSFET is an insulated-gate FET that works by controlling the depletion region (or channel) through the gate–channel capacitance. When a positive voltage is applied to the gate, an inversion layer is formed inside the transistor, thus increasing the current between the drain and source. At the same time, the voltage between the drain and the source decreases, effectively controlling the current flow.

When dealing with applications like those found in laptops, tablets and smartphones, the NVMFS4841NWFT1G is preferred as it offers a low on-resistance and a low thermal resistance, ensuring better performance. Additionally, its very low threshold voltage, which is a key parameter for low voltage performance, enables the device to switch at very low gate drive voltages. This transistor is also extremely reliable since it can withstand a high maximum junction temperature of 175°C, making it well-suited for any environment, including those where the temperature can get quite extreme.

The NVMFS4841NWFT1G is the perfect choice for applications needing low thermal resistance and low on-resistance. Its ability to switch at very low gate drive voltage enables its use in portable applications. It is also designed to operate at a maximum junction temperature of 175°C, making it suitable for virtually any environment. As such, it is the ideal choice for many applications, from laptops to tablets and smartphones.

The specific data is subject to PDF, and the above content is for reference