NVMFS5C450NLT1G Allicdata Electronics
Allicdata Part #:

NVMFS5C450NLT1G-ND

Manufacturer Part#:

NVMFS5C450NLT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 110A SO8FL
More Detail: N-Channel 40V 3.7W (Ta), 68W (Tc) Surface Mount 5...
DataSheet: NVMFS5C450NLT1G datasheetNVMFS5C450NLT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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NVMFS5C450NLT1G is a high performance n-channel, MOSFET that offers an excellent balance of on-resistance, gate charge and capacitances, making it ideal for high current switching and amplification. This component is part of the family of Transistors - FETs, MOSFETs - Single, making it applicable in a range of applications and circuit designs. This article will provide an overview of the application field and working principle of the NVMFS5C450NLT1G.

NVMFS5C450NLT1G is suitable for use in a variety of applications. It has a low gate threshold voltage, which makes it suitable for use in DC-to-DC conversion, forward converters and other high frequency switching applications. This component can also be used in battery-powered applications, such as portable instrumentation, as well as motor control and audio amplifier designs. Because of its low on-resistance, the MOSFET can support up to 500mA of continuous current per channel. This makes it ideal for use in high current applications without compromising efficiency.

The working principle of the NVMFS5C450NLT1G is based on the flow of electrical current. When the switch is off, the MOSFET prevents current from flowing through the device. When the switch is turned on, current can flow through the MOSFET because of the low on-resistance. The on-resistance of the MOSFET is determined by the gate threshold voltage, which must be less than or equal to the voltage of the power source in order for it to operate properly. The higher the gate threshold voltage is, the lower the on-resistance, which increases switch power output.

NVMFS5C450NLT1G also features a low turn-on and turn-off delay time. This is because the device does not require an input capacitor, allowing the device to turn on or off faster. In addition, the device also features a low input capacitance, which improves the circuit efficiency by reducing switching losses due to high input capacitance.

The low gate threshold voltage, high on-resistance, and low input capacitance of the NVMFS5C450NLT1G project make it an ideal choice in a range of high current applications. The fast turn-on and turn-off times also make it suitable for high frequency switching applications. In addition, because of its low gate threshold voltage, it is also suitable for battery-powered applications.

In summary, NVMFS5C450NLT1G is a high performance n-channel MOSFET that offers an excellent balance of on-resistance, gate charge and capacitances. It is ideal for use in high current switching, amplification, DC-to-DC conversion, forward converters, motor control and audio amplifier designs, among others. Its low gate threshold voltage, high on-resistance, and low input capacitance make it an ideal choice for a range of applications. Furthermore, the fast turn-on and turn-off times make it suitable for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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