NVMFS5C442NAFT1G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	2.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	29A (Ta), 140A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVMFS5C442NAFT1G is a NMOSFET (Negative Channel Metal Oxide Semiconductor Field-Effect Transistor) that is designed and manufactured by a number of leading semiconductor companies. It is part of the S5C442NAFT1G series of parts, which have been designed to improve the reliability and performance of power devices.In general, NMOSFETs are devices that are used in a wide range of applications including power conditioning and protection, as well as telecommunications and related functions. As such, they can be found in virtually all types of electronic equipment.The NVMFS5C442NAFT1G is a single-gate part with a gate threshold voltage of -7V. This feature, along with its other characteristics, makes it suitable for use in low-voltage applications. Its low on-state resistance of 0.003 ohms makes it ideal for use in high-performance, high current applications. Additionally, its reported avalanche withstand voltage of 40V makes it suitable for use in harsh conditions.The working principle of the NMOSFET is actually rather simple. An applied gate voltage (VGS) creates a gate field effect which controls the amount of current that is allowed to flow through the device. The current is only allowed to flow when the applied voltage is higher than the threshold voltage. This is generally referred to as the “ cut-off” voltage.In terms of the application field, the NVMFS5C442NAFT1G is ideal for low voltage applications and is particularly well-suited for use in consumer-electronics products and power-management circuits. It can be used in a wide range of circuits, from switching and microcontrollers, to automotive-related applications.The NVMFS5C442NAFT1G is a versatile part that has the potential to be used in a variety of applications. Its reliability, low-voltage requirements, and low-furrow resistance combine to make it an ideal choice for a range of applications. Its avalanche withstand voltage of 40V gives it the capability to be used in situations where high voltage spikes may occur.Overall, the NVMFS5C442NAFT1G is a reliable and efficient NMOSFET designed to fulfill all the requirements of modern applications. With its low threshold voltage and avalanche withstand voltage, it is suitable for use in many applications. In particular, it can be used in consumer electronics, power management, automotive, and industrial-related circuits.

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