NVMFS5C682NLWFT3G

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The NVMFS5C682NLWFT3G Field-Effect Transistor (FET) is a single, N-channel MOSFET that has a capability of up to a 10A drain/source current. It is intended for use in power management, load switching and transistor-controlled, asymmetrical power applications. This FET is primarily a low-side switch and an inverting circuit, and it is capable of maintaining a low on-state resistance, which is important for applications requiring low-on-state currents and low power losses. This FET has the capability to operate over a wide range of the on-state resistance range and can provide better performance than its non-inverting counterparts in certain conditions.

The NVMFS5C682NLWFT3G is a single N-channel MOSFET and is capable of integrating both high current and low input-voltage operation. The NVMFS5C682NLWFT3G has a maximum rated drain-source voltage of up to 25V, a maximum continuous drain current of up to 10A and a maximum drain-source on-state resistance of 70mΩ and a maximum reverse transfer capacitance of 25pF at 10A and 5V. This FET also offers a fast switching time of 4ns, making it compatible with high-frequency switching applications. The device also has a low gate threshold voltage and a low gate input capacitance. Overall, the NVMFS5C682NLWFT3G provides superior performance when it comes to power management and other power-switching applications.

The working principle of the NVMFS5C682NLWFT3G is based on the P-channel and N-channel MOSFET (FET) designs. The P-channel MOSFET, also known as a n-channel FET, operates by allowing only electrons to flow from the drain to the source, while the N-channel MOSFET, also known as a p-channel FET, operates by allowing only holes to flow from the drain to the source. In the NVMFS5C682NLWFT3G, a single N-channel FET is connected to a P-channel FET, allowing the FET to switch between states as the gate voltage is changed. The N-channel FET allows electrons to flow from the source to the drain when the gate voltage is positive, and the P-channel FET allows holes to flow from the source to the drain when the gate voltage is negative. This allows the device to be used in power control and switching applications, as the current can be switched on and off depending on the state of the gate voltage.

The NVMFS5C682NLWFT3G is ideal for applications such as load switching, power management systems, PC board relays and other power-switching applications. It is also suitable for use in automotive systems, consumer electronics, telecommunication systems, power supplies, inverters and motor controls. Its low on-state resistance and fast switching times make it ideal for a wide range of applications. It is also capable of operating at temperatures ranging from -55°C to 150°C, making it suitable for use in extreme temperature environments. The NVMFS5C682NLWFT3G is also available in a variety of packages, including the SOIC 8, SOP 8 and TO-263 packages.

The NVMFS5C682NLWFT3G FET is a single N-channel MOSFET which provides high performance in power-switching applications. It has low on-state resistance, fast switching times and wide temperature range capability, making it suitable for a wide range of applications. It also has a low gate threshold voltage and a low gate input capacitance, making it suitable for high-frequency switching applications. In summary, the NVMFS5C682NLWFT3G FET is an excellent device for achieving superior performance in applications requiring low-on-state currents and low power losses.

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