NVMFD5875NLWFT1G Allicdata Electronics
Allicdata Part #:

NVMFD5875NLWFT1G-ND

Manufacturer Part#:

NVMFD5875NLWFT1G

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 60V 7A SO8FL
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 7A 3.2W Surfac...
DataSheet: NVMFD5875NLWFT1G datasheetNVMFD5875NLWFT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 0.32603
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Description

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The NVMFD5875NLWFT1G is a high-speed, power-efficient and small signal enhancement-mode Silicon Gate MOSFET array in a single package. It enables the passage of signals between different devices in a variety of applications. This device is often used as a voltage-level shifter, signal booster or signal splitter in high-speed devices, owing to its low drive power and high switching speed.

Features

  • Priority interleaved address switching
  • Low drive current requirement (< 2mA)
  • Low device capacitance (0.25pF)
  • Low power dissipation- 600mV drain-source voltage
  • High output current capability (4A)
  • Gate-source threshold voltage of -3 V.

Applications

  • Power management and control
  • Data storage systems
  • PCI-X bus interface
  • Microcontroller and interrupt controllers
  • Voltage regulator circuits
  • Telecommunications

Working Principle

The NVMFD5875NLWFT1G operates under an enhancement-mode MOSFET principle. In this mode, the MOSFET is turned “ON” when a voltage applied to the gate is above a certain threshold voltage. The gate-source channel is opened and current flows through it. These devices can regulate the current flow, depending on the voltage applied to the gate. As the current passes, it is repulsed by a different electrostatic force, making the gate-drain connection capacitive and allowing the current to pass. The higher the value of the gate voltage, more current is pushed through, and the more the current passes, the lower the gate voltage. The gate voltage and drain-source voltage are interconnected. In this way, the NVMFD5875NLWFT1G is able to regulate, or cut off, the current flow.

Conclusion

The NVMFD5875NLWFT1G is a highly power-efficient, low-cost and small MOSFET array that can be used in a wide variety of applications. It allows signals to pass between different components with accuracy and precision. In addition, it is capable of regulating current flow, contributing to its wide range of uses. With its small footprint, low power consumption and high switching speed, this device is an effective way to manage power and control systems.

The specific data is subject to PDF, and the above content is for reference

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