NVMFS5C450NAFT3G

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The NVMFS5C450NAFT3G is a N-channel MOSFET transistor, part of the FS5C series. It is designed for high-current switching applications in both reverse- and forward-conduction modes, withstanding current up to ±20 A. Thi chip is often used in DC-DC converters, power management systems and UPS. In this article we will discuss the application field and working principle of NVMFS5C450NAFT3G.

NVMFS5C450NAFT3G is a standard N-channel enhancement mode (normally-off) MOSFET transistor. The chip has a threshold of 4.5 V, making it ideal for use in low-voltage applications. The device also boasts low on-state resistance, which enables switching with minimal power loss and high efficiency. The chip is available in a surface-mount D-pak package with an extended temperature range of -55 to 175 °C and an operating temperature range of -55 to 150 °C. The NVMFS5C450NAFT3G’s die size is 19.8×19.8 µm and its junction-to-ambient thermal resistance is 1.36 °C/W.

One of the key advantages of the NVMFS5C450NAFT3G chip is its high-current switching capability. It can handle currents up to ±20 A, making it ideal for low-voltage switching applications. The chip’s low on-state resistance also enables high efficiency. Additionally, the chip is designed with backside-etching technology, helping to reduce the stray capacitance and improve dv/dt capability.

The NVMFS5C450NAFT3G can be used in a variety of applications, including DC-DC converters, power management systems, UPS, and automotive systems. It is also suitable for many other applications where low-voltage, high-current switching is needed. The chip can also be used for switching synchronous rectification in forward converters and buck converters.

The NVMFS5C450NAFT3G’s internal structure is based on three distinct layers: a gate oxide, a semiconductor channel, and a drain. When a positive voltage is applied to the gate, electrons from the gate oxide repel, creating an “electron depletion zone” in the semiconductor channel. This zone, known as the “Threshold Voltage”, increases the resistance of the semiconductor channel. When the voltage across the drain and source is high enough, the transistor begins to conduct and electrons in the semiconductor channel move from source to drain. This process of transferring electrons from source to drain is known as the “channel inversion”.

The NVMFS5C450NAFT3G is designed to provide an optimized combination of on-resistance and efficient switching. Its low gate-to-drain charge ensures low switching losses, meaning the chip can handle large currents with minimal power loss. Additionally, the low gate-to-drain and drain-to-source capacitances help to minimize switching time. All these features make the NVMFS5C450NAFT3G an ideal MOSFET transistor for a variety of high-current switching applications.

In conclusion, the NVMFS5C450NAFT3G is a state-of-the-art N-channel MOSFET transistor designed for high-current switching applications. It has a low threshold voltage and low on-state resistance to enable efficient switching with minimal power loss. The chip is available in a surface-mount D-pak package, with an extended temperature range of -55 to 175 °C and an operating temperature range of -55 to 150 °C. The NVMFS5C450NAFT3G is perfect for use in low voltage applications, such as DC-DC converters, power management systems, and UPS.

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