NVMFS5826NLT3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVMFS5826NLT3G is a single N-Channel vertical D-MOSFET power transistor with excellent fast switching characteristics. As a consequence of its high current capacity, low capacitance and small package size, it is suited for many communication and industrial power applications. This transistor is manufactured using advanced dynamic vertical D-MOSFET power transistor process.

NVMFS5826NLT3G is a single N-Channel vertical D-MOSFET power transistor (MOSFET), which is an insulated-gate field-effect transistor (IGFET). It has two main components, the gate which provides the main control over the transistor, and the body which is constructed of doped silicon material and serves as the channel between the source and drain electrodes. The channel is where the majority carrier current flows due to the potential difference of the drain and source.

The basic working principle of the NVMFS5826NLT3G is based on the MOSFET, which is primarily a voltage-controlled device. When the gate voltage of the transistor is higher than the source voltage, the transistor is said to be in the off state and no current is allowed to pass from the drain to the source. This is known as the depletion region and it is created by the process of minority carrier injection. However, if the source voltage is higher than the gate voltage, a channel of electrons will start to form and current will flow from the drain to the source. This is known as the accumulation region.

The NVMFS5826NLT3G is primarily intended for use in industrial, communication and other motor control applications. It has high current capacity, low capacitance, and a small package size. The small package size allows for easy installation and is ideal for space-constrained applications. In addition, it has fast switching characteristics and it is highly suitable for driving applications such as DC motors, relays, and solenoids. It also has a very high degree of reliability and can operate over a wide temperature range.

Due to its high current capacity and low capacitance, the NVMFS5826NLT3G is also suitable for many radio frequency (RF) applications such as transmitters, receivers, modulators, demodulators, and linear amplifiers. Its robust construction ensures its long-term reliability in such applications. Its fast switching characteristics also make it suitable for power applications such as voltage regulators, high-side and low-side drivers, and power switching for DC/AC inverters.

In conclusion, the NVMFS5826NLT3G is a single N-Channel vertical D-MOSFET power transistor with excellent fast switching characteristics and is suitable for a wide range of industrial, communication, RF, and power applications. Its robust construction and small package size make it an ideal choice for use in space-constrained applications.

The specific data is subject to PDF, and the above content is for reference