NVMFS5C645NLWFT1G

Series:	Automotive, AEC-Q101
Part Status:	Discontinued at Digi-Key
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2200pF @ 50V
FET Feature:	--
Power Dissipation (Max):	79W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

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NVMFS5C645NLWFT1G is a single-channel N-MOSFET designed by the National Semiconductor Corporation. It provides a Normally-Off operation, which is a key advantage of the device. The device has a minimum guaranteed drain-source breakdown voltage (Vds) of 12V, a maximum drain current rating of 5A, an on-resistance (Rds) of 0.25Ω and a Gate-Source voltage (Vgss) rating of 10V.The main application of this device is in power-on switching applications. NVMFS5C645NLWFT1G is suitable for controlling and switching large loads, since it has a large power rating and can handle high-current operations. NVMFS5C645NLWFT1G can also be used for motor speed control and motor direction control. It can also be used in unipolar and bipolar motor applications. Furthermore, the device is suitable for battery powered applications as well as high-side switching applications.The device is also ideal for use in portable devices and automotive applications, since it is compact and has a low on-state resistance. It is capable of operating at high frequencies and has a large gate-source capacitance (Coss), thus making it suitable for high-speed switching applications.The working principle of NVMFS5C645NLWFT1G is based on the fact that it is a normally-off switch due to the no-current drain, even when it is off. The device is turned on when a voltage is applied to the gate. When this voltage is applied, it modifies the electric field between the source and the drain. As a result, a current is allowed to flow between the source and the drain. The current flow is dependent on the voltage applied to the gate and the resistance between the source and the drain, known as the on-state resistance.The device is usually configured as a low-resistance switching signal or a logic signal. In a low-resistance switching signal configuration, the gate signal should be above the sensing threshold voltage to switch the device on. In a logic signal configuration, the gate signal should be above the on-threshold voltage for the device to be switched on.In conclusion, NVMFS5C645NLWFT1G is a single-channel N-MOSFET which provides a Normally-Off operation and is suitable for power-on switching applications. It can also be used for motor speed control, motor direction control and switching large loads. The device is suitable for use in portable devices, battery powered applications and automotive applications due to its small size, low on-state resistance and high gate-source capacitance. The device is turned on when a voltage is applied to the gate, and the current flow is dependent on the voltage applied to the gate and the on-state resistance of the device.

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