Allicdata Part #: | NVMFS5C604NLAFT3G-ND |
Manufacturer Part#: |
NVMFS5C604NLAFT3G |
Price: | $ 1.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 287A 5DFN |
More Detail: | N-Channel 60V 287A (Tc) 200W (Tc) Surface Mount 5-... |
DataSheet: | NVMFS5C604NLAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 1.02409 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 287A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
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The NVMFS5C604NLAFT3G is a super-junction, N-channel insulated-gate field-effect transistor (IGFET) from ON Semiconductor. With a gate-source voltage range of -4V to +20V and a drain current capability of 6A, it is the perfect choice for low-side switching applications. It is primarily used in motor drive applications, solar inverters, DC/DC converters and power factor correction circuits. Its features make it ideal for high-side switching.
The NVMFS5C604NLAFT3G is a very sensitive and efficient device. Its high input impedance and low duty cycle switching are key features that make it stand out in the market. Its polar gate-source voltage allows for low-side switching and its low gate-source capacitance ensures that it provides high speeds with low dissipation. In addition, it has a low gate charge which helps in its low conduction losses, as well as its low operating temperature range.
The working principle of the NVMFS5C604NLAFT3G is quite simple. It is a voltage-controlled device which means that its output is modulated by an applied voltage. When the gate voltage is at one of its two threshold voltages (either positive or negative), the NVMFS5C604NLAFT3G changes its state from on to off, or from off to on. This is done by switching an applied voltage from one source to another, thus creating a saturated or non-saturated condition. When the voltage is low, the device is in its off state, and when it is high, the device is in its on state.
The NVMFS5C604NLAFT3G also features a fast switching time, which is important in motor control and power factor correction applications. It has a drain-source voltage of 60V, which is good for reducing energy losses and ensuring reliability. In addition, it can easily be used in 12V-60V circuits.
The NVMFS5C604NLAFT3G is an excellent choice for low-side switching applications. It is highly efficient, has a low dissipation rate and can easily be used with other components. It is ideal for motor control, solar inverters and DC/DC converters, as well as power factor correction circuits. Its features make it the perfect choice for high-side switching.
The specific data is subject to PDF, and the above content is for reference
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