Allicdata Part #: | NVMFS5C430NWFAFT1G-ND |
Manufacturer Part#: |
NVMFS5C430NWFAFT1G |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 35A 185A 5DFN |
More Detail: | N-Channel 40V 35A (Ta), 185A (Tc) 3.8W (Ta), 106W ... |
DataSheet: | NVMFS5C430NWFAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.45350 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 106W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta), 185A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS5C430NWFAFT1G stands for Non-Volatile Memory Field-Effect Transistor 5C430N N-Channel MOSFET with a breakdown voltage rating of 4.3V and a low equivalent on-resistance of 10 mΩ (typical) at a gate voltage of 4.5V. This type of field-effect transistor is commonly used in a variety of applications, such as spike protection in power supply or electrical noise filtering.
There are two types of field-effect transistors (FETs) commonly used in the electronics industry: junction FETs and metal-oxide-semiconductor FETs (MOSFETs). NVMFS5C430NWFAFT1G is a type of MOSFET, which is further classified as a single-level MOSFET owing to its single gate structure. Due to their small size, high speed response, and low power consumption, MOSFETs are widely incorporated in various electronic circuits and devices.
Working Principle of NVMFS5C430NWFAFT1G
A field-effect transistor is a three-terminal electronic component with a source, drain, and gate terminal. The gate terminal controls the flow of electric current between the source and the drain terminals. In a MOSFET, the gate terminal is insulated from the other two terminals by a layer of oxide or passivation material, which makes it operate as a voltage-controlled device. When a voltage is applied to the gate terminal, a field is generated between the gate and the source, which in turn depletes or inverts the carriers in the channel region between the source and the drain. This modulates the current between the source and drain and allows the transistor to act as a switch.
The NVMFS5C430NWFAFT1G is a voltage-controlled device with a single-level gate structure. This means that its gate voltage has to be set to a certain level for it to be triggered, switching the transistor from an “off” state to an “on” state. This makes the NVMFS5C430NWFAFT1G ideal for applications where a precise and reliable control of the gate voltage is required, such as spike protection in power supplies, motor drivers, and electrical noise filtering.
Application Fields of NVMFS5C430NWFAFT1G
The NVMFS5C430NWFAFT1G is ideally suited for applications that require precise and reliable control of the gate voltage. For example, it can be used in power supplies as a spike protection device, as its low on-resistance and high breakdown voltage makes it ideal for this type of application. It can also be used in motor drivers and in electrical noise filtering circuits.
In addition, the NVMFS5C430NWFAFT1G can also be used in low-power switching applications, as its low gate charge and low capacitance reduce power dissipation. This makes the NVMFS5C430NWFAFT1G an ideal choice for applications where low power dissipation is a priority.
The NVMFS5C430NWFAFT1G is also well suited for applications where a high level of efficiency is required, such as automotive and industrial power supplies, as its high breakdown voltage and low on-resistance result in less energy being wasted in the form of heat.
Overall, the NVMFS5C430NWFAFT1G is an ideal choice for any application that requires precise and reliable control of the gate voltage, high efficiency, low power dissipation, and/or high breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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