Allicdata Part #: | NVMFS5C410NWFT3G-ND |
Manufacturer Part#: |
NVMFS5C410NWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.9W (Ta), 166W (Tc) Surface Mount ... |
DataSheet: | NVMFS5C410NWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 166W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 0.92 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C410NWFT3G is a single N-Channel Enhancement Mode Field-Effect Transistor (FET) from Fairchild Semiconductor. This semiconductor comes in a package of US5, with drain current rating of 8.5 Amps, drain-source peak voltage of up to 200 Volts and gate threshold voltage of 4 Volts, making it one of the most reliable and robust single, n-channel FETs on the market. The device can be used for a variety of applications, such as motor control, power management, switching, and drive. It is also suitable for audio and video equipment, consumer and automotive electronics, and other similar applications.
The NVMFS5C410NWFT3G is a voltage-controlled field-effect transistor that is capable of low-voltage, low-power operation due to its high transconductance and low gate-to-source capacitance. It works through Applification, which is the process by which a small current at the gate is amplified to create a large current between the drain and the source. The process of Applification is virtually identical to the operation of a unit transistor amplifier. The device also has an extremely low on-resistance, which means that it can switch on and off very quickly, making it well suited for high speed switching applications.
The NVMFS5C410NWFT3G also has a wide range of temperature capabilities, allowing it to operate over extended periods of time in extreme environments. It also has an extremely low current leakage rating, making it incredibly power efficient and reliable. The FET also has a fast switching speed, making it ideal for applications which require fast switching operations.
In conclusion, the NVMFS5C410NWFT3G is a single N-Channel Enhancement Mode FET from Fairchild Semiconductor. It is capable of low-voltage, low-power operation due to its high transconductance and low gate-to-source capacitance. The device is ideal for motor control, power management, switching, and drive applications due to its fast switching speed and low current leakage rating. It is also suitable for audio and video equipment, consumer and automotive electronics, and other similar applications.
The specific data is subject to PDF, and the above content is for reference
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