Allicdata Part #: | NVMFS5C442NT3G-ND |
Manufacturer Part#: |
NVMFS5C442NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.7W (Ta), 83W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C442NT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C442NT3G is a single-gate FET, which stands for field effect transistor. It is a type of transistor used in various electronic circuits and components. FETs are essentially active devices that alter the flow of electrons from source to drain in an electronic circuit. NVMFS5C442NT3G is an ultra-miniature FET that was designed for fast and timely measurements.
The NVMFS5C442NT3G is an enhancement mode, single-gate FET. This means that the gate electrode is connected to a low impedance and is used to control the drain current. When the gate voltage is increased, the drain current increases, thus allowing more current to flow through the device. Conversely, when the gate voltage is decreased, the drain current decreases, thereby reducing the amount of current flowing through the device.
NVMFS5C442NT3G is a particularly suitable and reliable device for many applications due to its small size and high power performance. This makes it an ideal choice for a wide range of applications, including industrial and consumer products, high speed telecom, and military applications.
NVMFS5C442NT3G is a chip composed of several elements, including a drain-source P-channel FET, a gate-source FET, and a body-gate FET. The drain-source P-channel FET is the main component of the chip, which provides the switching and isolation between the drain and source nodes, while the gate-source FET provides the dynamic control of the drain current. Finally, the body-gate FET provides the gate insulation. Together, these elements make up the chip, allowing the device to perform its functions.
NVMFS5C442NT3G is capable of operating at an extremely high frequency, ranging from 500 KHz to 6 GHz. Its extremely low gate capacitance and high transconductance also make it an attractive choice for high frequency applications. Moreover, its small size makes it an excellent choice for use in ultra-miniature applications where space is at a premium.
The working principle of the NVMFS5C442NT3G is that it allows current to flow from the source to the drain when the gate voltage is increased. As mentioned earlier, this gate voltage is typically provided by an external source, such as a digital signal processor or microprocessor. The amount of current that is allowed to flow is determined by the voltage applied to the gate. If the voltage is too low, no current will flow; if it is too high, the device will become unresponsive. The current will only flow when the gate voltage is just right.
Overall, the NVMFS5C442NT3G is an excellent choice for a wide range of applications. Its small size, low gate capacitance, high transconductance, and high frequency make it a highly efficient and reliable device. Additionally, its ultra-miniature form factor makes it an ideal choice for applications where space is at a premium. As such, the NVMFS5C442NT3G is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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