Allicdata Part #: | NVMFS5C442NWFT3G-ND |
Manufacturer Part#: |
NVMFS5C442NWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.7W (Ta), 83W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C442NWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C442NWFT3G is a type of single N-channel enhancement mode field-effect transistor (FET) manufactured by On Semiconductor. This FET offers low ON-resistance, making it suitable for numerous applications, including power switching, audio switching and DC-DC converter synchronization.
The NVMFS5C442NWFT3G utilizes a proprietary fabrication process with the resulting MOSFET architecture combining low frequency gate and output capacitance, resulting in an improved and highly reliable device. The NVMFS5C442NWFT3G incorporates a drain and body diode, as well as higher voltage and gate threshold options, giving designers more flexibility in determining which device to use for a specific application.
The NVMFS5C442NWFT3G is designed with a gate-source voltage range from -4.0V to +20V, enabling fast and efficient switching performance. This allows the FET to switch as quickly as 30ns to minimize power dissipation and reduce overall system costs. The ON-resistance is just 16 mOhm, providing an excellent level of performance with respect to both energy efficiency and control.
The operation of the NVMFS5C442NWFT3G is based on the MOSFET principle. In this type of transistor, the current flowing between the source and the drain is controlled by the voltage applied to the gate. This allows the FET switch to achieve fast transitions between on and off states with very low power dissipation.
NVMFS5C442NWFT3G is ideal for automotive, logic and consumer electronics applications, where low ON-resistance, fast switching times and excellent low power performance are needed. This FET can also be used in point of load designs, where the small size, high current ratings and low power requirement of the FET are beneficial. Additionally, the low input capacitance of the NVMFS5C442NWFT3G makes it a suitable choice for DC-DC converter synchronization.
In conclusion, the NVMFS5C442NWFT3G is an ideal choice for a wide variety of applications, thanks to its low ON-resistance, fast switching performance, small size and low input capacitance. Its MOSFET architecture allows it to offer excellent energy efficiency and control in power management designs. Thus, the NVMFS5C442NWFT3G has become a popular choice for implementing switching and power management within numerous applications.
The specific data is subject to PDF, and the above content is for reference
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