NVMFS6B03NLWFT3G

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NVMFS6B03NLWFT3G is a N-channel enhancement mode Field-Effect Transistor (FET) which is also sometimes referred to as a Voltage-controlled Inverter. It is a power device that is used to invert and amplify electrical signals by applying a voltage to a gate input. This particular FET is a single or dual FET with a drain to source breakdown voltage of 300 volts, gate to source maximum breakdown voltage of 12 volts. It is also designed to have a gate-source cutoff voltage of 4 volts, a maximum drain current of 11 amperes, and a maximum power dissipation of 32 watts.This FET is used in a wide range of applications from automotive and industrial circuits to consumer electronic products. It operates with an on-state resistance of 13 ohms, a maximum drain-source on-state voltage of 4 volts, and a gate-drain leakage current of 5 uA. It is also designed to have an input capacitance of 2476 pF, a junction capacitance of 1228 pF, and a maximum operating temperature of 175°C.NVMFS6B03NLWFT3G is used primarily in switchmode power applications, such as switchmode power supplies, motor controllers, and DC-to-DC converters. Its primary function in these applications is to act as a switch, allowing a high current to be switched on or off rapidly. The FET is particularly useful in DC-to-DC converters, as it can act as a frequency-controlled switch, allowing the switching frequency of the power supply to be adjusted.One of the main advantages of the NVMFS6B03NLWFT3G is its ability to provide excellent thermal performance. It is designed to dissipate heat from the channel efficiently, reducing the risk of overheating and potentially damaging the surrounding components. It also has excellent temperature stability and can withstand temperature variations of up to 175°C. This is important for applications that must operate in extreme temperatures, as the FET can provide reliable operation in a wide range of environments.The FET also provides good user protection against damage, as it has a built-in fail-safe feature that prevents the device from drawing too much current and causing damage to other components. It also has a low gate-drain saturation voltage, which helps to provide improved performance in switching applications.The working principle of the NVMFS6B03NLWFT3G is quite simple. It consists of an N-type channel that is surrounded by two gate contact pads. When a voltage is applied to these two gate contact pads, it creates an electric field which induces a current flow between the drain and source. This current flow is controlled by the voltage applied to the gate contact pads, allowing the FET to be used as a switching device.In conclusion, NVMFS6B03NLWFT3G is a N-channel enhancement mode Field-Effect Transistor that is well-suited for use in a variety of applications. It offers high current-handling capabilities, excellent thermal performance, user-protection safeguards, and a low gate-drain saturation voltage for better performance. This FET is designed to provide reliable operation in a wide range of environmental conditions and is a great choice for applications that require a reliable switch or inverter.

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