NVMFS5C638NLWFT1G Allicdata Electronics
Allicdata Part #:

NVMFS5C638NLWFT1G-ND

Manufacturer Part#:

NVMFS5C638NLWFT1G

Price: $ 0.47
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: 60V 3.0 MOHM T6 S08FL SIN
More Detail: N-Channel 60V 26A (Ta), 133A (Tc) 4W (Ta), 100W (T...
DataSheet: NVMFS5C638NLWFT1G datasheetNVMFS5C638NLWFT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 0.42460
Stock 1000Can Ship Immediately
$ 0.47
Specifications
Gate Charge (Qg) (Max) @ Vgs: 40.7nC @ 10V
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 4W (Ta), 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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NVMFS5C638NLWFT1G, or NVM for short, is a type of Field Effect Transistor (FET) that is used in a variety of applications. It is also known as an N-Channel Enhancement Mode MOSFET, meaning it utilizes an electric field, rather than a mechanical switch, to control its huge current output. This article will provide an overview of the applications and working principles of the NVMFS5C638NLWFT1G.
The main advantage of using the NVMFS5C638NLWFT1G FET is its low power consumption. The power consumption of the NVMFS5C638NLWFT1G is significantly lower than that of other, similar FETs, making it ideal for many applications where power efficiency is of great importance. The low voltage turn-on requirements also make it suitable for use in very small devices such as microcontrollers and microprocessors.
In terms of its application fields, the NVMFS5C638NLWFT1G is primarily used in automotive applications. It can be used as a switch for controlling hundreds of different components, from headlights to in-car audio systems. It is also used in the communications and computing sectors for a variety of tasks, ranging from transmitting data between two points, to powering a microprocessor or microcontroller.
In terms of its working principle, the NVMFS5C638NLWF1G is an N-type MOSFET, meaning it is an enhancement-mode device. This means that when it is off, no current can flow through it; however, when a small current is applied to it, its resistance is reduced, allowing current to flow through it. In this manner, it acts as a switch, allowing or preventing the flow of current, depending on the amount of current applied.
The NVMFS5C638NLWFT1G is also a powerful FET that can handle large currents, up to 120 amperes. The FET also has a very low on-resistivity, meaning that it is very efficient in its power usage when it is turned on. It is also very reliable, with a very long lifetime expectancy of up to 100,000 hours.
Overall, the NVMFS5C638NLWFT1G is a very versatile and reliable FET that is used in a variety of applications, ranging from automotive to communications. It is an N-type MOSFET that has a very low power consumption and a low on-resistivity, allowing it to handle huge amounts of current efficiently. It is also very reliable, with a long lifetime expectancy.

The specific data is subject to PDF, and the above content is for reference

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