NVMFS6B03NT1G

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NVMFS6B03NT1G is an advanced in-line, single-channel N-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by ON Semiconductor. It utilizes the Multi-Epitaxial Base Trench technology that decreases on-state resistance, or RDS(ON), and has a low gate charge to reduce switching losses. The device\'s high drain-source breakdown voltage (BVDSS) helps increase its current capability over a wide range of frequencies, making it suitable for a variety of applications.

The NVMFS6B03NT1G is comprised of an insulated gate field effect transistor and is operated in either enhancement or depletion mode. In enhancement mode, the device acts as an amplifier, allowing very low gate current and low gate-source capacitance, which provides faster switching times and improved energy savings. In depletion mode, on the other hand, the transistor acts as an inverter, allowing for high gate current and high gate-source capacitance.

The NVMFS6B03NT1G MOSFET offers applications in a variety of industries, including automotive, industrial, computing and consumer electronics, to name just a few. It can be used to switch power MOSFETs, buffer high power loads and act as an inverting input in synchronous rectifier applications. The device is specifically designed to be used in applications operating at an ambient temperature range of -55 °C to 155 °C (accuracy of ±3 °C).

The NVMFS6B03NT1G has a current rating of 5 A and a VDS of 40 V, making it well suited for motor-drive applications that require high-current switching. It also has a low on-resistance of 6.1 Ω, which helps reduce power dissipation. The device also offers a low gate charge, eliminating the need for heavy drivers.

The NVMFS6B03NT1G’s maximum drain-source capacitance (Coss) of 15.3 pF helps reduce its source-to-sink inductance (Ls). Its low capacitance also helps reduce EMI interference that could disrupt communication and data processing in automotive, industrial, and consumer electronics applications. The device is rated for an avalanche energy of 15 mJ, making it highly reliable and more resistant to thermal breakdowns.

Overall, the NVMFS6B03NT1G is an advanced single-channel N-type MOSFET that offers high power efficiency, fast switching times and improved energy savings. It is suitable for a wide range of applications, including motor-drive applications, switching power MOSFETs, buffering high power loads, synchronous rectifier input, and EMI interference control, among others. The device’s low on-resistance, low gate charge and low drain-source capacitance also provide significant advantages over similar devices.

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