Allicdata Part #: | NVMFS5C645NLWFAFT3G-ND |
Manufacturer Part#: |
NVMFS5C645NLWFAFT3G |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 100A SO8FL |
More Detail: | N-Channel 60V 22A (Ta), 100A (Tc) 3.7W (Ta), 79W (... |
DataSheet: | NVMFS5C645NLWFAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.31673 |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 50V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The NVMFS5C645NLWFAFT3G is a discrete semiconductor device classified as a type of field-effect transistor (FET), more specifically a MOSFET that is single in construction. It is typically used in a variety of circuits, with a range of applications across a wide variety of fields. This article will explore the application fields of the device and explain its working principle.
Application Fields
The NVMFS5C645NLWFAFT3G is used in a wide variety of electronics and electrical circuits, such as amplifier circuits, switching circuits, and logic circuits. Some of its most common applications include:
- Control of high-current loads, such as motors and relays.
- Power transmission and power conditioning in solar cells and wind turbines.
- Amplification in radio frequency (RF) receivers.
- As a voltage controlled switch in analog circuits.
- Switching in digital circuits.
In addition to these applications, the NVMFS5C645NLWFAFT3G can also be used to control current flow in a circuit, to reduce electromagnetic interference (EMI), and to create a DC-to-DC converter. All of these applications require the use of a single MOSFET.
Working Principle
The working principle of the NVMFS5C645NLWFAFT3G is based on the fact that it is a type of Field-effect transistor. This means that it is able to regulate current flow on a semiconductor chip by using an electric field to either block or allow the current to flow. This is achieved by using a drain, source, and gate terminal on the transistor.
The source is connected to the voltage source of the circuit and provides a constant voltage. The drain is connected to the current load in the circuit, and this is where the regulation of current flow occurs. By applying a voltage or current to the gate terminal, the resistance between the source and drain terminals can be adjusted. If a positive voltage is applied to the gate terminal, the resistance between the source and drain terminals will increase, blocking the flow of current. If a negative voltage is applied to the gate terminal, the resistance between the source and drain terminals will decrease, allowing current to flow.
In conclusion, the NVMFS5C645NLWFAFT3G is a discrete semiconductor device classified as a type of field-effect transistor (FET), more specifically a MOSFET that is single in construction. It is used in a variety of electrical and electronic circuits, such as amplifier circuits, switching circuits, and logic circuits. The NVMFS5C645NLWFAFT3G works by using an electric field to control the resistance between a source and drain terminal, which can be used to either block or allow the flow of current through the circuit.
The specific data is subject to PDF, and the above content is for reference
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