NVMFD5483NLWFT1G

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The NVMFD5483NLWFT1G is a type of Field Effect Transistor (FET) array. FETs basically act as modular on/off switches, allowing for a variety of applications. The NVMFD5483NLWFT1G is a dual transistor MOSFET with source and drain connections, allowing for both low and high-power switching operations. It is an array of two integrated transistors, meaning that two transistors are connected together to form an “array”. This is beneficial because it allows for increased speed of simultaneous operations due to the two transistors working together.

This particular FET array is used in a variety of applications like amplifiers, power supplies, linearchips, and high speed signal switching. It allows for high-speed switching of electrical currents, providing a reliable way to regulate the flow of current. By connecting a set of transistors together, the current is able to switch between various states quickly and efficiently without the need for additional hardware.

The NVMFD5483NLWFT1G is composed of two n-channel MOSFET transistors with a total gate-source resistance of 14 mΩ. This resistance allows for fast switching times and reduced turn-on delay. The device also has a drain-source breakdown voltage of 500V. This voltage is the maximum voltage that can be applied across the gate and source of the device before it breaks down, and is usually used in applications where high power currents must be switched rapidly.

The two FETs that make up the NVMFD5483NLWFT1G are connected in parallel. This means that both transistors are connected to a common source, and the output is connected to a common drain. This allows the current to travel through both transistors, which can increase both the switching speed and accuracy. The parallel arrangement also increases the current handling capabilities of the device, allowing it to handle higher power loads.

The working principle of the NVMFD5483NLWFT1G is relatively simple. When a voltage is applied to the gate, the transistor conducts and creates a closed circuit. This allows electricity to flow through the device, which can be used to control other electrical components, or to adjust the current in a circuit. The voltage required to activate the device can vary depending on the load, but it typically ranges from 5 to 12 V.

The NVMFD5483NLWFT1G is a powerful and reliable dual transistor MOSFET with numerous applications. Its low gate-source resistance allows for fast switching times and high current handling capabilities. Its ability to switch high power currents and its compact form factor make it an optimal choice for a variety of applications like amplifiers, power supplies, and high speed signal switching. In all, the NVMFD5483NLWFT1G is an ideal FET array for high power, high speed operation.

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