NVMFD5853NWFT1G

NVMFD5853NWFT1G is an advanced, low gate charge power MOSFET. It provides top performance and high reliability for a variety of applications such as line and load switch in power supplies, DC-DC converters and similar control or drive circuits.

Application Field

NVMFD5853NWFT1G are suitable for many applications such as power management applications, general-purpose and low voltage switching applications, Multiple Output DC-DC converters and secondary and tertiary synchronous rectification and generic buck converters. It is also suitable for a variety of industrial applications such as welding and motor control.

The device is available in both TO-220 and leaded SOT-223 packages. Compared to standard MOSFETs, they provide a much lower gate charge, which helps to achieve high frequency switching even with low gate drive signals.

Working Principle

NVMFD5853NWFT1G is a smart power MOSFET. It features various combined logic functions such as output enable/disable, logic enable/disable, independent level shifting and enable control, pull-up enable, and enable active high/low. The logic enable/disable control allows for a range of input signal levels for enable inputs. This enables the device to be used in a variety of applications, from low voltage and general-purpose ones to complex power management.

The MOSFET is constructed from a channeled Silicon substrate integrated with a drain and a source. The gate is used to drive the MOSFET. When the gate is low the junction between the drain and source is ‘off’, blocking any current flow. However, when the gate is driven ‘high’ the junction opens allowing current to flow. As the voltage on the gate is increased, so is the amount of current that can flow through the channel. This is how the device works in its most basic form.

The device also offers additional functionality such as a soft-start function, which allows for a slower start during normal operating conditions. This control allows for better stability and reduces the amount of switching noise. This can be beneficial in high-frequency applications such as DC to DC converters.

The device also features integrated over-voltage, over-temperature and under-voltage protection. This protection prevents the device from being damaged in the event of an unexpected over-voltage or under-voltage. It also helps to protect the system from damage caused by high temperatures.

Overall, NVMFD5853NWFT1G is an advanced, low gate charge power MOSFET. It offers improved power consumption and fast switching times, while also providing a wide range of features such as integrated logic functions, soft start control, and protection features.