NVMFD5C462NT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	17.6A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs:	5.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1020pF @ 25V
Power - Max:	3.2W (Ta), 50W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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Transistors - FETs, MOSFETs - Arrays

NVMFD5C462NT1G is a type of field effect transistor (FET), a semiconductor device that is used to amplify and switch electrical signals, typically utilized as an electrical switch. It forms part of an array of interconnected FETs, which can be used as ultra-fast inverters due to their low on-resistance values. FETs in general have three terminals: the source, the drain, and the gate. FETs are further classified according to the flow of charge carriers, with N-channel and P-channel types. NVMFD5C462NT1G is an N-type FET; it is constructed with a granular layer of negative-charge carriers (known as N-type material).The NVMFD5C462NT1G has many applications, primarily in the automation and robotics industries. It is widely used as part of automated control systems, as a voltage-controlled switch for controlling current flow. Due to its small size and low power requirements, it is a popular choice for companies operating in the robotics and automation industries who need to build fast and efficient systems.The NVMFD5C462NT1G consists of a number of components that all work together to achieve its purpose. The FET (check acronym) is typically housed within a protective casing to prevent damage to the sensitive components. It is also surrounded by an array of terminals; each terminal corresponds to a specific section of the FET. The source terminal is attached to the gate of the FET, while the gate is attached to the drain.The crucial feature of the NVMFD5C462NT1G is its low on-resistance. A FET is said to have low on-resistance when the channel resistance is low and the gate current has a minimal affect on the drain current. The low on-resistance ensures that electric current flows rapidly between the source and the drain without any significant voltage drop, making it a desirable option for applications where fast switching and rapid switching response is required.Another feature of the NVMFD5C462NT1G is its integrated array construction, which allows a single transistor to be connected to multiple gates. This design allows a single device to control multiple electrical signals at the same time, which saves time and money by reducing the number of components required.The NVMFD5C462NT1G is designed to work in the most efficient manner possible. It relies on the properties of field-effect transistors to control the flow of current. When a positive voltage is applied to the gate (which is connected to the source terminal), a thin layer of negative-charge carriers is formed around the FET. These carriers then repel each other, creating an electrical field which controls the flow of current from the source to the drain. When the voltage is removed from the gate, the electrical field collapses and current is no longer able to flow between the source and the drain.The NVMFD5C462NT1G is designed to work with a range of input voltages, making it suitable for a variety of applications. It is usually manufactured in 5-pin surface mountable packages, making it easy to incorporate into existing designs. The FET also has a low thermal resistance, which helps to improve reliability and reduce power dissipations.As a transistor, the NVMFD5C462NT1G is an essential part of a variety of applications. It is typically used as a valve to control current flow, allowing engineers to build high-performance, high-efficiency systems. It is also used in arrays, either as an inverter or to provide external switching signals. It is a cost-effective and highly efficient solution for many applications and its small size and low power requirements make it an ideal choice for companies needing to build fast and efficient systems.

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