NVMFD5C674NLWFT1G Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs:	14.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	640pF @ 25V
Power - Max:	3W (Ta), 37W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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NVMFD5C674NLWFT1G is a transistor array device manufactured by ON Semiconductor which mainly consists of a low-voltage, high-current, power Field Effect Transistor (FET) array. It is the ideal choice for introduction of advance transistor circuits in switching, high frequency and analog applications. This array mostly comes in a pack of 9 FETs with individually enable and disable control capabilities.This 4x4 FET array features ON Semiconductor\'s super junction technology for exceptional low RDS(ON), service life, high density, and low gate charge. It also features a logic level shift pin for easy logic level control, enhanced thermal characteristics for reliable operation, and halogen-free packaging for performance and safety. NVMFD5C674NLWFT1G has a low input capacitance of only 3.2 pF making it an excellent choice for applications in motor control, power management, power conversion, and other power applications. The integrated N-channel switching FETs are designed to offer excellent signal integrity and deliver maximum efficiency and power management. With an integrated Schottky diode, it eliminates the need to externally connect a diode. NVMFD5C674NLWFT1G has a low threshold voltage of -2.1V which means it is capable of operating at low frequencies, where it can provide improved efficiency and performance. It operates with a wide temperature range of -55 degrees to 150 degrees Celsius and is rated for either 600V for an RDS(ON) of 560mΩ or 800V for an RDS(ON) of 685mΩ, with an impressive current ratings of 24A (at 25°C).The working principle of the NVMFD5C674NLWFT1G is similar to other mosfet-based transistors. An externally applied voltage is applied to the gate, which in turn creates an electric field. This electric fields creates a conducting channel between the source and the drain of the FET allowing current to flow from the source to the drain when the voltage is greater than the threshold voltage of the FET. This electric field can be modulated and controlled externally by varying the gate voltage. The integrated N-channel switching FETs offer good signal reconstruction and high efficiency while consuming less power. Its low input capacitance of 3.2 pF helps reduce the switching time, resulting in improved signal integrity and reducing power loss. The device also features a logic level shift pin for easy logic level control as well as an integrated Schottky diode which eliminates the need to externally connect a diode. The NVMFD5C674NLWFT1G has been designed to be ideal for a variety of high-performance, low-voltage, high-current, power Field Effect Transistor (FET) array applications, such as motor control, power management, and power conversion. It features excellent thermal characteristics for reliable operation and halogen-free packaging for performance and safety, in addition to a wide temperature range of -55 degrees to 150 degrees Celsius. Additionally, it is rated for either 600V for an RDS(ON) of 560mΩ or 800V for an RDS(ON) of 685mΩ and offers an impressive current rating of 24A (at 25°C). Overall, NVMFD5C674NLWFT1G is an advanced transistor array device suitable for a variety of applications and is a reliable, high-performance solution for introducing advanced transistor circuits into switching, high frequency and analog applications.

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