| Allicdata Part #: | NVMFS6B25NLT1G-ND |
| Manufacturer Part#: |
NVMFS6B25NLT1G |
| Price: | $ 0.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 8A 33A 5DFN |
| More Detail: | N-Channel 100V 8A (Ta), 33A (Ta) 3.6W (Ta), 62W (T... |
| DataSheet: |  NVMFS6B25NLT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.35385 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.6W (Ta), 62W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 905pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 24 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 33A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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NVMFS6B25NLT1G is an Integrated Computer-On-Module (COM) of the 3rd generation type. This module combines the advantages of both a small footprint, low power consumption and superior performance in a single package. It fits the requirements of applications in industrial, medical, transportation and consumer devices. The integrated functions offered by this module are mainly designed to accelerate time-to-market of products with improved performance, reliability and energy efficiency. This eliminates the need for costly hardware development and testing.The module is based on the NVMFS6B25NLT1G FET, a single-sided MOSFET with full n-channel control and extremely low threshold voltage (VTH). It is designed to provide superior performance in switching and low noise operation with minimum power dissipation. The FET features an optimized cell design, which allows it to be driven with lower power while remaining in the linear mode.The NVMFS6B25NLT1G FET works on the principle of a voltage-mode MOSFET, where the drain-source voltage (VDS) is used as a controlling parameter for the device. When a positive voltage is applied to the gate terminal (VGS), the device turns “on” and current flows from the drain terminal to the source terminal. As the voltage at the gate terminal rises, the drain current (ID) increases, this is known as the saturation region of the device.In the enhancement mode, the NVMFS6B25NLT1G FET acts like an analog switch, allowing the drain current to be varied with only minimal variation of the source voltage (VSS). The FET exhibits superb properties in terms of reduced power consumption and noise levels. This FET also offers excellent linearity and temperature stability; as such, it is well suited for low-noise, high-power applications.In addition to the voltage-mode operation described above, there are other configurations of the NVMFS6B25NLT1G FET. One is the logic-level mode, which is ideal for logic-level applications. This mode offers improved accuracy and ensures that the drive level is not dependent on the power supply. The logic-level mode also allows for interfacing with a variety of logic signals, such as voltage-controlled devices and other digital circuits.The NVMFS6B25NLT1G FET offers numerous advantages in a variety of applications. One of its primary benefits is that it has a compact size and design, making it very cost-effective. In addition, its low power consumption makes it ideal for low power applications. Finally, its low noise operation makes it an excellent choice for high-speed, high-efficiency applications.Overall, the NVMFS6B25NLT1G FET is an ideal solution for applications that require superior performance and reliability with low power dissipation and noise levels. It is also very cost-effective and offers a range of configurations to meet the requirements of many different applications. This FET is a great choice for applications where low power consumption and superior performance are essential.
The specific data is subject to PDF, and the above content is for reference
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