Allicdata Part #: | NVMFS5844NLT3G-ND |
Manufacturer Part#: |
NVMFS5844NLT3G |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 8SOIC |
More Detail: | N-Channel 60V 11.2A (Ta) 3.7W (Ta), 107W (Tc) Surf... |
DataSheet: | NVMFS5844NLT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.29869 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NVMFS5844NLT3G is a single N-channel Metal Oxide Field Effect Transistor (MOSFET). This type of transistor utilizes an electrically isolated gate which controls the flow of electrons through a semiconducting channel to a source and a drain. This makes it a voltage-controlled device, providing superior current and voltage characteristics, and making it very versatile for use in both analog and digital circuits.
The NVMFS5844NLT3G is an enhancement-mode MOSFET with a wide power range, low on-resistance and an operating voltage range of 80V to 220V. The PIN configuration for this device is as follows: GN, D, S and G. GN indicates the gate and G indicates the source. This device features a built-in body diode, and because of its lower resistance, it has an increased switching speed, better thermal stability and a more uniform current distribution than other MOSFET devices.
The NVMFS5844NLT3G is typically used in a variety of applications, such as power supply circuits, buck converters, DC/DC converters, throttle motors, switching regulators, motor controls, audio amplifiers, etc. It is also used as a high-speed switch in high-frequency switching circuits, thanks to its superior switching characteristics. This device is also ideal for automated control systems as well as in pulsed-demagnetizing fields.
The NVMFS5844NLT3G mainly relies on the draining current of holes for operation, which is the main purpose of its design. When the positive voltage is applied to the gate of the MOSFET, it creates an inversion layer of electrons at its interface which in turn results in the creation of a depletion area in the PN junction between the source and drain. This depletion region acts as an electrical field effect transistor which controls the flow of current from source to drain.
There are also several other types of MOSFETs available, including depletion-mode and enhancement-mode. The depletion-mode MOSFET acts like a silicon radio transistor and has the opposite effect of an enhancement-mode MOSFET. This type uses the majoritic flow of electrons between the source and the drain, instead of a depletion layer, to create a voltage-controlled operation. This type of MOSFET is commonly used for digital circuits.
The NVMFS5844NLT3G is just one device from a wide range of MOSFET technologies designed for specific applications. While the working principle of each MOSFET may be similar, the on-resistance and other electrical characteristics vary. Thus, it is important to select the right device for the application. As with any semiconductor device, the selection of the right MOSFET is critically important to ensure reliable operation and optimal performance.
The specific data is subject to PDF, and the above content is for reference
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