Allicdata Part #: | NVMFS5C677NLT1G-ND |
Manufacturer Part#: |
NVMFS5C677NLT1G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | T6 60V S08FL SINGLE |
More Detail: | N-Channel 60V 11A (Ta), 36A (Tc) 3.5W (Ta), 37W (T... |
DataSheet: | NVMFS5C677NLT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.18547 |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 2V @ 25µA |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 36A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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NVMFS5C677NLT1G is an N-Channel enhancement mode vertical DMOS transistor for general purpose applications. It is a single, dual, or multi-chip transistor that is designed for use in switching and linear applications. It is capable of operating at high frequencies and can be used in applications that require power amplification, high-speed switching, or low-power switching. The NVMFS5C677NLT1G has a vertical DMOS structure, offering low Rds(on) and high-speed switching.
NVMFS5C677NLT1G Application Field: NVMFS5C677NLT1G can be used in a wide variety of applications including power management, switching regulators, automotive relays, audio amplifiers, and DC motors. It can be used to amplify power in applications that require high-speed switching, such as in automotive relay and ignition systems, power converters, switching regulators, and computer peripheral control systems. Additionally, it can be used to provide low-power switching in applications that require regulated current, such as in audio amplifiers and DC motor control systems. Furthermore, it can be used for low-power switching in applications that require low-voltage and high-current operation, such as in transistors for LED drivers and charge pumps.
NVMFS5C677NLT1G Working Principle: The NVMFS5C677NLT1G uses a vertical DMOS structure, allowing it to operate at high frequencies and low on-state resistance. It consists of a vertical MOSFET structure with a gate, source, and drain electrodes connected through a vertical dielectric layer. When the gate is energized, the MOSFET is switched on, allowing current to flow from source to drain. When the gate is de-energized, the MOSFET is switched off, blocking current flow from source to drain. The NVMFS5C677NLT1G is capable of operating at high frequencies and can be used for power amplification, high-speed switching, and low-power switching.
The NVMFS5C677NLT1G is a versatile single, dual, or multi-chip transistor that is designed for use in a wide range of applications. It offers low on-state resistance, high-speed switching, and power amplification capabilities, making it a great choice for applications that require regulated current, power management, and high-frequency switching. Its vertical DMOS structure allows it to be used in low-voltage, high-current operation, making it ideal for applications such as LED drivers and charge pumps.
The specific data is subject to PDF, and the above content is for reference
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