NVMFS5A140PLZWFT3G

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NVMFS5A140PLZWFT3G is a single N-channel enhancement-mode Field-Effect Transistor (FET). It is fabricated using advanced planar technology and designed for use in all types of digital and analog circuits. This FET can be fully complementary to both N-channel and P-channel FETs.*

The NVMFS5A140PLZWFT3G device provides superior performance in noise, switching speeds, and transconductance. Its low on-resistance makes it a great choice for applications that require low R_DS(ON). In addition, its fast switching characteristics make it well-suited for high frequency circuits.

The operating voltage range of NVMFS5A140PLZWFT3G is from -55 V to +55 V. It can support a maximum drain current of 5A and maximum drain-source voltage up to 140 V.

NVMFS5A140PLZWFT3G has the relatively high transconductance of ± 0.75 S and the relatively low gate-source voltages of 0.4 V for the smaller gate-source voltage range, and 1 V for the larger gate-source voltage range. Its low gate-drain capacitance of 220 pF is great for minimizing unwanted capacitive coupling.

NVMFS5A140PLZWFT3G works by converting the varying gate-source voltage into a varying drain-source voltage (V_DS). It is designed such that, when the gate-source voltage is increased, the V_DS will also increase, and vice versa. The amount of voltage variation is determined by the transconductance, which is the relationship between the change in drain current and the change in gate-source voltage. Generally, fabrication will determine the transconductance value of the FET, while the environment and temperature can influence it.

NVMFS5A140PLZWFT3G can be used in applications such as power switches, high-efficiency DC/DC converters, power management systems, power amplifiers, high-speed switching circuits, and RF switching. It is particularly suitable for use in high-reliability applications due to its robust design and high maximum breakdown voltage.

For optimal performance of the NVMFS5A140PLZWFT3G, care must be taken to ensure that its temperature does not exceed the maximum operating temperature specified on the datasheet. In addition, careful selection of the gate-source voltage range, gate-drain voltage range, and gate capacitance is also necessary for proper operation.

To sum up, NVMFS5A140PLZWFT3G is an advanced single N-channel enhancement-mode FET designed for a wide range of applications. Its low on-resistance, high transconductance, and low-capacitance construction make it well-suited for high frequency applications. Its robust design and high maximum breakdown voltage of 140 V make it especially suitable for high-reliability applications.

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