Allicdata Part #: | NVMFS4C302NT1G-ND |
Manufacturer Part#: |
NVMFS4C302NT1G |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | NFET SO8FL 30V 1.15MO |
More Detail: | N-Channel 30V 43A (Ta), 241A (Tc) 3.75W (Ta), 115W... |
DataSheet: | NVMFS4C302NT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.48252 |
Current - Continuous Drain (Id) @ 25°C: | 43A (Ta), 241A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.15 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5780pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 115W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
Series: | Automotive, AEC-Q101 |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
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The NVMFS4C302NT1G is a single gate, N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device for use in a wide range of applications. It can be used in a variety of circuits as a load switch, level shifter, voltage blocker, or as a digital logic gate. It also has a relatively low voltage drop, making it an ideal choice for low-voltage applications.
At the heart of the NVMFS4C302NT1G is a semiconductor which is the control element of the MOSFET. This element is capable of controlling the flow of current between the source and drain through the application of a voltage to the gate terminal. The basic function of the MOSFET is to control the current flow between two terminals, the source and the drain, by applying a voltage to the gate, and as such, a MOSFET is said to be a voltage-controlled field-effect transistor.
The NVMFS4C302NT1G has a max drain-source voltage of 30V and a maximum current of 30A. It is suitable for both DC and AC applications and features an on-resistance of 3 Ohms. The device is designed to operate at an ambient temperature range of -55-C to 125-C. It is also designed to withstand certain levels of electrostatic discharge.
The low voltage drop of the NVMFS4C302NT1G makes it an ideal choice for low-voltage applications such as digital logic gates, level shifters, and load switches. Additionally, it is a perfect choice for applications with limited space because of its small package size. It is also able to handle high-current loads that require a faster switching speed.
The NVMFS4C302NT1G is also used in power supply devices and power electronics thanks to its use of a major advantage which is its low on-resistance. With its low on-resistance, the device can achieve higher efficiency in power applications, improved output voltage and current stability, faster switching times, and lower heating and thermal dissipation.
The NVMFS4C302NT1G is a versatile MOSFET device that can be used in a number of applications. It can be used as a load switch, level shifter, voltage blocker, digital logic gate, and as a power supply device. It is also suitable for both DC and AC applications and can provide high current outputs through its low on-resistance. The device features a small package size and a wide temperature range, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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