NVMFS4C05NT3G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS4C05NT3GOSTR-ND |
Manufacturer Part#: |
NVMFS4C05NT3G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 116A SO8FL |
More Detail: | N-Channel 30V 24.7A (Ta), 116A (Tc) 3.61W (Ta), 79... |
DataSheet: | NVMFS4C05NT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.18486 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.61W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1972pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24.7A (Ta), 116A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NVMFS4C05NT3G is an advanced product of Super Small-sized Package (SSOP)-10 of 4V drive, normally-off, low-side power switch integrated circuit. This product is based on the advanced Vertical DMOS (VDMOS) process and can be used to switch inductive loads such as motors, solenoids, and relays with higher endurance and accuracy. Among the many integrated circuit products available on the market, NVMFS4C05NT3G belongs to a special category called transistors – FETs, MOSFETs – Single. It has specific application fields and working principles which will be discussed here.
The working principle of NVMFS4C05NT3G is based on the very principle of field-effect transistor (FET). A FET is a transistor used to provide a low-impedance connection between the drain (output) and source (input) terminals. It is a three-terminal device as in the case of NVMFS4C05NT3G. The gate terminal of the FET controls the opening and closing of the channel between the source and drain terminals which determine the voltage between the source and the drain terminals. In other words, the voltage between the source and the drain terminals will depend on the voltage applied to the gate terminal of the FET.
NVMFS4C05NT3G has several application fields and one of them is Power Switch. It is primarily used as a switch in DC power system to control power on/off. It can also be used to control small motors, solenoids and relays, as the NVMFS4C05NT3G has high endurance and accuracy. It is also used for end-of-line applications such as in power supplies, home appliances and other equipment. Additionally, NVMFS4C05NT3G is suitable for use in harsh environment applications due to its superior durability and reliability.
NVMFS4C05NT3G is an ideal choice for device protection applications. This device can be used to protect sensitive devices from overvoltage, overcurrent and undershoot conditions. It can also be used to prevent catastrophic failures in equipment due to abnormal conditions. The device also provides reverse currentblocking capability, making it a great choice for a variety of device protection applications.
NVMFS4C05NT3G also has many advantages for power management applications. It uses ultra-low on-resistance (RDSon) which results in low power consumption and minimal power loss. Additionally, high current capability enables faster switch response times and improved efficiency. Lastly, this device has very low standby power consumption, which is a key feature in battery-powered equipment.
In conclusion, NVMFS4C05NT3G is an advanced product of Super Small-sized Package (SSOP)-10 of 4V drive, normally-off, low-side power switch integrated circuit. It belongs to the transistors – FETs, MOSFETs – Single category and has several different application fields such as power switch, device protection, and power management. Its working principle is based on the field-effect transistor (FET) which allows it to switch between low-impedance connection between the source and the drain terminals depending on the voltage applied to the gate terminal. Consequently, this product has many advantages over its counterparts such as low power loss and low standby power consumption, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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