NVMFS5C456NT1G

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.6W (Ta), 55W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1150pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The NVMFS5C456NT1G is a single enhancement mode N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It\'s a low-power device used in consumer electronic and power management applications such as motor control, battery management, and power line communications. The NVMFS5C456NT1G is widely used in consumer electronics, telecommunications, automotive and other industries for applications such as switching, boosting capacitors, controlling sensors and gate drives. The device has an integrated gate driver that enables an easy system integration.The NVMFS5C456NT1G is well suited for portable consumer electronics applications due to its low energy consumption. When compared to traditional MOSFETs, it offers improved power efficiency and higher switching speeds thanks to its advanced design. The device has a small footprint and is easily integrated into system designs.The NVMFS5C456NT1G\'s working principle is based on the Transfer Gate Oxyde Thickness (TGOX) effect. This metal oxide layer is formed on the gate of the device and this is used to control the transistor\'s current. The gate voltage is the key factor in controlling the current. By changing the voltage at the gate, the metal oxide layer thickens or thins and changes the transistor’s conductive characteristics. In a Single MOSFET device, the gate voltage controls the current flowing through the transistor. The higher the voltage at the gate, the higher the current will flow. Conversely, the lower the voltage at the gate, the lower the current will flow. This makes a single MOSFET device ideal for switching and controlling the current, which is why it is used in all kinds of consumer electronics, power management and automotive applications.The NVMFS5C456NT1G is particularly useful for applications that require high-speed switching. It has a switching time of 10 ns, which is ideal for applications that require quick responses. It also has a low supply voltage (1.8 V) and a low gate voltage of 1.2 V, which makes it an efficient device when compared to other transistors.The gate-source (G-S) capacitance of the NVMFS5C456NT1G is smaller than the conventional MOSFET devices, which makes it capable of switching faster. It also has a higher driving capability due to its improved SOA (Safe Operating Area) which prevents the device from overheating and damaging itself or other components. This high SOA ensures reliable operation and increases efficiency.The NVMFS5C456NT1G is a great choice for applications that require low-power devices with high-speed switching capability. Its small package and low supply voltage allows for easy integration into systems. The integrated gate driver ensures that the switching speed is fast and the higher SOA prevents any damage to the device. Its Transfer Gate Oxyde Thickness (TGOX) effect allows for precise control of the current flowing through the device which makes it a great choice for consumer electronic and power management applications.

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