Allicdata Part #: | NVMFS5C423NLT1GOSTR-ND |
Manufacturer Part#: |
NVMFS5C423NLT1G |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 126A SO8FL |
More Detail: | N-Channel 40V 3.7W (Ta), 83W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C423NLT1G Datasheet/PDF |
Quantity: | 3000 |
1500 +: | $ 0.36548 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C423NLT1G is the industry leading switching JFET, or Junction Field Effect Transistor, supplied by NXP. The device is a low power, low leakage, and low capacitance transistor that offers superior performance in a range of applications. The device is designed for use as a high current, low voltage switch in a number of different applications including power switches, voltage reference circuits, and digital-to-analog converters. It is a single electrolytic transistor with four terminals, three of which are directly connected to the ground. In this article, we will discuss the application field and working principle of the NVMFS5C423NLT1G device.
The NVMFS5C423NLT1G device is used in a range of applications to provide a low power, low leakage, and low capacitance transistor solution. Its application field includes power switches, voltage references, and digital-to-analog converters. The device is designed specifically for low power, low leakage, and low capacitance applications. The device is optimized for applications such as power switches, voltage references, pulse shaping and pulse circuits, timing circuits, bridge circuits, and high-speed switching circuits.
The NVMFS5C423NLT1G transistor operates through a p-n-p junction switching process. The device is constructed by connecting two layers of p-n-p semiconductor materials. As current flows through the transistor, the voltage required for turning it on or off can change. The device has the ability to change its resistance depending on the voltage applied through the gate terminal. When the voltage applied is higher than the threshold voltage, the device is “turned on” and can conduct current through the drain terminal. When the gate voltage is lower than the threshold voltage, the device is “turned off” and cannot conduct current through the drain terminal.
The NVMFS5C423NLT1G device has several advantages over other transistors. First, it is low power and has a low gate capacitance. This makes it suitable to use in low power applications and allows for faster switching. Second, it has low leakage and a low on-resistance. This provides improved performance over other types of transistors and makes it ideal for use in high current applications. Finally, it has a low turn-on and turn-off voltage, which is advantageous for stability.
In summary, the NVMFS5C423NLT1G is an industry leading JFET transistor supplied by NXP. The device is designed for low power, low leakage, and low capacitance applications such as power switches, voltage references, pulse shaping and pulse circuits, timing circuits, bridge circuits, and high-speed switching circuits. It operates through a p-n-p junction switching process and has the advantage of low power, low gate capacitance, low leakage, low on-resistance, and low turn-on and turn-off voltage. The device is suitable for use in a range of applications and provides superior performance.
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