NVMFS5C468NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS5C468NT1GOSTR-ND |
Manufacturer Part#: |
NVMFS5C468NT1G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | 40V 12 MOHM T6 S08FL SING |
More Detail: | N-Channel 40V 12A (Ta), 35A (Tc) 3.5W (Ta), 28W (T... |
DataSheet: | NVMFS5C468NT1G Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.17366 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.9nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 35A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS5C468NT1G is an insulated-gate type field effect transistor (IGFET) that is made up of a combination of N-channel metal–oxide–semiconductor (MOS) and other insulated gate FETs. It is an enhancement-mode device, used in various applications such as switching and amplification. This particular device is composed of a matched P-channel and N-channel MOSFETs in a single package, configured in a source-follower configuration with source-output capability.
The NVMFS5C468NT1G is a high-speed, low-cost device that can be used for a variety of applications. One example is high-speed switching applications, which make use of both the high-speed switching nature of the device and its low voltage drop characteristic. Another use would be in motor control circuits, as the high speed of the device makes it suitable for driving high-power current requirements.
The NVMFS5C468NT1G is commercially available in both through-hole and surface-mount packages. The former is suitable for applications such as consumer electronicsand motor control, while the latter is more appropriate for board-mount applications such as communications equipment and industrial automation. The low-cost nature of the device makes it attractive for any application where speed and power efficiency are important, such as automotive, industrial, and consumer applications.
The basic principles behind the operation of NVMFS5C468NT1G are similar to those of any other insulated gate FET. This type of FET consists of three terminals: a source, a gate, and a drain. An electric field is generated between the source and the drain that controls the conductivity between the two. When a voltage is applied to the gate, it varies the electric field between the two terminals, allowing current to pass from the source to the drain. The amount of current passing through the device is dependent on the voltage applied to the gate.
The NVMFS5C468NT1G has a high-speed switching characteristic, and thus it is suitable for applications requiring fast switching, such as switching power supplies or motor controllers. Additionally, due to its low voltage drop characteristic, it is suitable for low-voltage supply applications. Furthermore, this device can also be used in voltage-controlled circuits, due to its varying current flow characteristics.
In conclusion, the NVMFS5C468NT1G is a versatile device that can be used in a variety of applications, from high-speed switching to motor control and low-voltage supply. Its low cost, combined with its high-speed characteristics, makes it attractive for many different applications. Furthermore, the device\'s versatility and wide availability make it a popular choice for a wide range of projects.
The specific data is subject to PDF, and the above content is for reference
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